Allicdata Part #: | 1N5256BTRFSTR-ND |
Manufacturer Part#: |
1N5256BTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 30V 500MW DO35 |
More Detail: | Zener Diode 30V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5256BTR Datasheet/PDF |
Quantity: | 5000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 30V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 49 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 23V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5256 |
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Diodes - Zener - Single
1N5256BTR is a popular silicon Zener diode. It is mainly used in voltage stabilizing circuits and circuit protections, such as overvoltage protection, spikes protection and other voltage settling applications. It is a two-terminal Zener diode, which includes functionality of both a standard diode junction and a Zener diode.
Application Field of 1N5256BTR
1N5256BTR is designed for use in many different applications. The device is recommended for all voltage stabilizing circuits and circuit protections, like overvoltage protection, spikes protection and other voltage settling applications. It also can be used in the reverse direction as a normal diode when necessary. 1N5256BTR is a low power Zener diode, so it is suitable for low power applications.
Working Principle of 1N5256BTR
The working principle of 1N5256BTR is relatively simple. It is formed from a single N-type semiconductor material doped with impurities so that it contains both N-type and P-type regions. This junction between the two regions acts as a Zener diode. To reduce breakdown voltage, a Zener impurity is added to the structure. When a reverse voltage is applied to the diode, the P-type region will become depleted and the electric potential across the diode increases. When the voltage increases beyond a certain level, the electric potential in the P-type region will become low enough so that current can flow through it. As more current flows, more electrons will be injected into the P-type region, which further reduces the voltage across the diode. This is known as Zener breakdown and it is this phenomenon which allows the diode to stabilize the voltage.
Conclusion
The 1N5256BTR is a widely used silicon Zener diode designed for voltage stabilizing circuits and circuit protections. Its working principle is relatively simple and relies on the Zener breakdown phenomenon to stabilize the voltage. The device is particularly useful for applications that require a low power Zener diode, and is suitable for low power applications. It is ideal for overvoltage protection, spikes protection and other voltage settling applications.
The specific data is subject to PDF, and the above content is for reference
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