1N5271BE3 Allicdata Electronics
Allicdata Part #:

1N5271BE3MS-ND

Manufacturer Part#:

1N5271BE3

Price: $ 2.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: ZENER DIODES
More Detail: Zener Diode 100V 500mW ±5% Through Hole DO-35 (DO-...
DataSheet: 1N5271BE3 datasheet1N5271BE3 Datasheet/PDF
Quantity: 1000
313 +: $ 1.95803
Stock 1000Can Ship Immediately
$ 2.18
Specifications
Series: --
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 500 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 76V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

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The 1N5271BE3 is a member of the Zener diode family of components. It is a single, axial-leaded component that belongs to the SnapDiscs family. Zener diodes are a form of diode with a specific characteristic that allows for reverse-voltage protection and voltage reference in circuits. They are commonly used in power supplies, voltage dividers, voltage regulators and any other circuit, which needs a stabilized voltage.

The 1N5271BE3 is designed to enable a stable output voltage of 5.1V (with a 5% tolerance) when exposed to applied voltage (Vz) levels between 4.9V and 5.1V. A Zener diode’s working principle revolves around its unique knee-shaped reverse current-voltage characteristic. At applied voltage levels below the diode\'s breakdown voltage level, Vz, the diode behaves like an ideal diode, with a high positive resistance or V-I (Voltage-Current) curve. However, when the applied voltage is increased beyond Vz, the diode’s resistance decreases dramatically and the current through it increases exponentially. It is this exponential increase in current that leads to the formation of a stable reference voltage at the device’s terminals.

1N5271BE3 diodes are commonly used in power-supply units, voltage regulators and battery protection circuits. These devices are very popular in low-voltage applications, such as powering portable electronic devices, and in automotive electronics, where the 1N5271BE3’s highly efficient reverse-breakdown characteristics can be beneficial. Due to its very small size, the 1N5271BE3 is well-suited for use in compact circuit designs.

Aside from its application in the digital electronics world, the 1N5271BE3 diode also finds use in radio-frequency circuits. RF circuits are especially prone to interference and can greatly benefit from the 1N5271BE3’s low-noise characteristics. Furthermore, the 1N5271BE3’s relatively large band-gap makes it resistant to temperature changes which occur during operation, making it an ideal choice for RF circuit designs.

The 1N5271BE3 diode is a powerful and reliable device with a multitude of uses across the fields of power electronics, voltage regulation and radio-frequency systems. Its handy snap-on case makes it very easy to install and its robust internal structure is capable of enduring temperatures beyond its maximum specified range, making it a very reliable component for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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