1N5282TR Allicdata Electronics
Allicdata Part #:

1N5282TRTR-ND

Manufacturer Part#:

1N5282TR

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 80V 200MA DO35
More Detail: Diode Standard 80V 200mA Through Hole DO-35
DataSheet: 1N5282TR datasheet1N5282TR Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01777
30000 +: $ 0.01672
50000 +: $ 0.01568
100000 +: $ 0.01394
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 55V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Base Part Number: 1N5282
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes, most commonly referred to as rectifiers, are one of the basic components of electrical circuits, and are used to convert alternating current into a direct current.

The 1N5282TR is a single rectifier diode, meaning it is made of a single semiconductor junction, usually formed between two substances (usually two different semiconductors). This type of diode only requires a single junction, meaning it consumes less power than the other available models and is more efficient.

This diode offers an on-state forward voltage drop of 0.58-volts with a repetitive peak reverse voltage of 330V. It also offers a non-repetitive peak reverse voltage of 620V, a peak pulse current rating of 10A, and a repetitive peak reverse current of 0.5 mA. It also features a 5A forward current rating, which is also known as a continuous current rating.

The 1N5282TR is mainly used for general signal rectification and high frequency rectification in SMPS and power amplifier applications such as welding equipment, motor control circuits, temperature sensing, low voltage regulators, audio amplifiers, and many more. The diode is also well suited for applications needing good high temperature characteristics and fast response time.

The working principle of the 1N5282TR relies on the process of PN junction formation, which allows it to regulate current flow. The junction between the two semiconductor materials is formed by diffusion. As electrons from one material diffuse into the other material, they combine with electron holes resulting in the formation of two sections called the P-type and N-type. The space in between the two sections is called the depletion region, which prevents current from flowing through the diode unless activated.

When the diode is activated, a current begins to flow through the PN junction, resulting in an increase in voltage. The amount of current sustained in the diode is proportional to this increase in voltage. However, because the diode is designed with a low forward drop, there is a limit to the amount current that can be sustain in it. This current-limiting characteristic is what makes the diode ideal for applications requiring a certain level of current.

In conclusion, the 1N5282TR is a single rectifier diode that is mainly used for general signal rectification and high frequency rectification in SMPS and power amplifier applications. Its working principle relies on the PN junction formation process, which allows it to regulate current flow and offer a low forward drop. This makes it perfect for applications requiring a certain level of current.

The specific data is subject to PDF, and the above content is for reference

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