
Allicdata Part #: | 1N5282TRTR-ND |
Manufacturer Part#: |
1N5282TR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 80V 200MA DO35 |
More Detail: | Diode Standard 80V 200mA Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.01777 |
30000 +: | $ 0.01672 |
50000 +: | $ 0.01568 |
100000 +: | $ 0.01394 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 55V |
Capacitance @ Vr, F: | 2.5pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
Base Part Number: | 1N5282 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, most commonly referred to as rectifiers, are one of the basic components of electrical circuits, and are used to convert alternating current into a direct current.
The 1N5282TR is a single rectifier diode, meaning it is made of a single semiconductor junction, usually formed between two substances (usually two different semiconductors). This type of diode only requires a single junction, meaning it consumes less power than the other available models and is more efficient.
This diode offers an on-state forward voltage drop of 0.58-volts with a repetitive peak reverse voltage of 330V. It also offers a non-repetitive peak reverse voltage of 620V, a peak pulse current rating of 10A, and a repetitive peak reverse current of 0.5 mA. It also features a 5A forward current rating, which is also known as a continuous current rating.
The 1N5282TR is mainly used for general signal rectification and high frequency rectification in SMPS and power amplifier applications such as welding equipment, motor control circuits, temperature sensing, low voltage regulators, audio amplifiers, and many more. The diode is also well suited for applications needing good high temperature characteristics and fast response time.
The working principle of the 1N5282TR relies on the process of PN junction formation, which allows it to regulate current flow. The junction between the two semiconductor materials is formed by diffusion. As electrons from one material diffuse into the other material, they combine with electron holes resulting in the formation of two sections called the P-type and N-type. The space in between the two sections is called the depletion region, which prevents current from flowing through the diode unless activated.
When the diode is activated, a current begins to flow through the PN junction, resulting in an increase in voltage. The amount of current sustained in the diode is proportional to this increase in voltage. However, because the diode is designed with a low forward drop, there is a limit to the amount current that can be sustain in it. This current-limiting characteristic is what makes the diode ideal for applications requiring a certain level of current.
In conclusion, the 1N5282TR is a single rectifier diode that is mainly used for general signal rectification and high frequency rectification in SMPS and power amplifier applications. Its working principle relies on the PN junction formation process, which allows it to regulate current flow and offer a low forward drop. This makes it perfect for applications requiring a certain level of current.
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