1N5335AE3/TR13

1N5335AE3/TR13 is a single zener diode produced by ON Semiconductor, a manufacturer of discrete semiconductors and electronic components. Zener diodes are active elements used to control the voltage in electronic circuitry. As the name implies, 1N5335AE3/TR13 is a single zener diode, meaning that it contains one PN junction inside it. The PN junction can be used to construct a diode, a rectifier or be used as a switch in a bipolar junction transistor. Depending on the current limit, the zener diode can protect the circuit from overvoltage. Zener diodes are device specifically designed for voltage reference or voltage clamping applications.

The 1N5335AE3/TR13 has a maximum power dissipation rating of 500mW and a typical breakdown voltage of 3.3V. Its maximum forward voltage drop is 0.5V and it is rated for a maximum reverse voltage of 5V. Its breakdown current is 2.2mA and it has a maximum surge current rating of 30mV. Its maximum junction temperature is 150°C. It is a SOT-23 package.

Application field of 1N5335AE3/TR13 zener diode could be various circuits and electronic systems where there is a need of providing overvoltage protection and voltage regulation. This single zener diode can be used as a voltage reference, i.e., it can provide a stable reference voltage to prevent the variation of output voltage of the system due to varying input voltage, as well as various other applications. It can be used in voltage regulation circuits to control voltage supply, in oscillators to maintain stable frequency and in switched-mode power supplies control circuit.

The working principle of a 1N5335AE3/TR13 single zener diode is simple. When forward biased, the current passes from anode to cathode through the PN junction. When the voltage across the diode reaches its breakdown voltage, the diode starts to conduct and it diverts the excessive voltage away from the device. The higher the breakdown voltage, the higher the protection for the circuit. Due to the breakdown voltage of the diode, any additional voltage is blocked from entering the circuit and, thus, the circuit is protected from overvoltage.

In conclusion, 1N5335AE3/TR13 is a single zener diode produced by ON Semiconductor with a maximum power dissipation rating of 500mW, a typical breakdown voltage of 3.3V and a reverse voltage of 5V. Its application fields range from voltage reference, voltage clamping to various other applications where it can provide overvoltage protection or voltage regulation. Its working principle is based on the breakdown voltage of the diode, which prevents excess voltage from entering the device and thus, protecting it from damage.