1N5345E3/TR13

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The 1N5345E3/TR13 is a single Zener diode designed for use in the voltage regulation and reference fields. It is a semiconductor element that has two active regions, an N-type and P-type, connected in series. The N-type region is an area of silicon atoms with one electrical charge that carries electrons from the external circuit into the diode. The P-type region is an area of silicon atoms with the opposite charge that carries the holes from the external circuit into the diode. This creates a junction between the two regions such that the current can only flow in one direction, the generated voltage depends on the voltage drop between the two regions. This diode is made of gallium antimonide and has a maximum reverse breakdown voltage of 5.3V, with a power dissipation of 300mW. When used in voltage regulation or reference circuits, the 1N5345E3/TR13 allows for precise control of the voltage and current between the N and P regions to achieve the desired level of regulation or reference. Consequently, the diode is ideal for high voltage applications, and is in fact used extensively in AC/DC converters, automotive electronics, and home-electronic applications. The working principle of the 1N5345E3/TR13 diode is based on the principle of avalanche breakdown. The junction between the N and P regions breaks down when a certain voltage is applied, either reverse or forward, resulting in a significant increase in the current conduction. This junctions breakdown voltage is known as the Zener voltage, for which the 1N5345E3/TR13′s is 5.3V. At this breakdown voltage current flow is unrestricted, and the diode behaves like a simple shunt. When used in voltage regulation or reference applications, the diode is operated in reverse bias, allowing the current to flow through the diode in a controlled fashion and allowing the voltage to remain unaffected by changes in the external environment. Similarly, when used in AC/DC converters and automotive electronics, the diode provides power control and regulates the output voltage. The 1N5345E3/TR13 is designed for optimal use in applications which require low power dissipation and secure voltage regulation over a wide temperature range. With its wide bandgap, the diode can tolerate operating temperatures of -40 to 85°C and still maintain its accuracy in voltage regulation and reference. It is also very reliable and has a long service life, allowing it to be used in a wide range of critical applications. In sum, the 1N5345E3/TR13 is a single Zener diode designed for use in voltage regulation and reference circuits. It has a wide bandgap and can tolerate operating temperatures of -40 to 85°C, allowing it to be used in a wide range of applications. As its reverse breakdown voltage is 5.3V, it can provides secure voltage regulation over a wide temperature range. Its low power dissipation, secure voltage regulation, and long life span make it ideal for home and automotive electronic applications.

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