![1N5362E3/TR13 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1N5362E3/TR13-ND |
Manufacturer Part#: |
1N5362E3/TR13 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 28V 5W T18 |
More Detail: | Zener Diode 28V 5W ±20% Through Hole T-18 |
DataSheet: | ![]() |
Quantity: | 1000 |
1250 +: | $ 0.49877 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 28V |
Tolerance: | ±20% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 6 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 20.1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5362 |
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.1N5362E3/TR13 is a Zener diode belonging to the single diode family. The features of 1N5362E3/TR13 include a nominal 5.6V reverse breakdown voltage, 5% tolerance, 0.12W power dissipation and 500mW power rating.
The main application field and working principle of 1N5362E3/TR13 can be divided into two parts. The first part is for voltage regulation, for example, it is often been used as a reference voltage source for integrated circuits in a circuit board. It has the ability to precisely regulate voltage in an analog circuit without needing additional components. The second part refers to its protection working principle. With the reverse breakdown voltage and low power dissipation, the 1N5362E3/TR13 can be used for transient voltage suppression, protecting the connected devices against ESD (electrostatic discharges), clamping surge and lightning overcurrent, providing short circuit protection to the connected devices.
1N5362E3/TR13 also has many typical features of a Zener diode, such as their construction, features and limitations. It is made of a semiconductor material embedded between two electrodes (anode and cathode). The behavior of a Zener diode is that it allows current to flow in forward (non-reversed voltage) direction until the junction PN break down. In the reversed bias condition, current will flow through the diode until the Zener voltage is reached, resulting to the breakdown voltage.
Thefeatures off 1N5362E3/TR13 that enable it to stand out from other general diodes include a low actual burden voltage and fast switching speed. The actual burden voltage is important because the lower the actual burden voltage, the better of the overall performance of the associated circuit. The fast switching speed of 1N5362E3/TR13 allows it to reduce the energy loss thereby providing stability to the device. Other typical characteristics for this diode are its relatively low leakage current, low capacitance, high stability, and high reliability.
Overall,1N5362E3/TR13 is a great device with widely useful features,making it ancellent choice among many other general diodes. It can be used in many applications such as voltage regulation, transient voltage suppression, protection, etc. It has excellent features that enable it to stand out from other general diodes, such as low actual burden voltage and fast switching speed, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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