1N5333B Allicdata Electronics
Allicdata Part #:

1N5333BMSTR-ND

Manufacturer Part#:

1N5333B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 3.3V 5W T18
More Detail: Zener Diode 3.3V 5W ±5% Through Hole T-18
DataSheet: 1N5333B datasheet1N5333B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 300µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5333
Description

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1N5333B is a single Zener diode that is commonly used in power management applications such as voltage regulation, protecting circuits against overvoltage, and providing voltage references. This device is capable of a variety of applications and its operational characteristics make it desirable for use in many electronic circuits. In this article, we will discuss the various application fields of the 1N5333B and its working principle. The 1N5333B is a preferentially used for voltage regulation. Its primary function is to maintain a constant voltage at the output of its associated circuitry, regardless of input variations or fluctuations. This device is also useful for overvoltage protection, as it can quickly clamp a voltage that is too high, thereby preventing damage to its associated circuits. The 1N5333B is also able to serve as a voltage reference, allowing circuits to work reliably at a predetermined voltage.The 1N5333B employs a Zener breakdown effect to allow it to operate in these different functions. When a Zener diode is biased in the reverse direction, it can be modeled as a resistor and a diode in parallel. When the diode is forward biased, the diode behaves as an open circuit. When the voltage applied in the reverse direction is greater than the Zener breakdown voltage, the diode suddenly changes from its "open" state to a "closed" state and the voltage across the diode remains nearly constant. This Zener breakdown voltage is determined by the doping concentration of the semiconductor used in the device and is the key operational characteristic for the 1N5333B.Because the 1N5333B operates based on the Zener breakdown effect, it has the ability to provide a very low impedance path for current flow from the output to the input of the associated circuitry. This means that the voltage regulation capabilities of the 1N5333B are very effective. It also means that the 1N5333B is capable of dissipating the excess energy caused by voltage fluctuations or input changes, thus protecting the associated circuitry.The voltage reference capability of the 1N5333B is a result of its operational characteristics. When the reverse bias is below the Zener breakdown voltage, the diode acts as an open circuit and the output of the associated circuitry is unaffected. When the voltage exceeds the Zener breakdown voltage, the diode suddenly changes to its "closed" state and the output voltage of the associated circuitry remains at a predetermined level. This predetermined level is determined by the Zener breakdown voltage, which is the voltage at which the Zener breakdown effect occurs.The 1N5333B is a versatile device that can be used for a variety of purposes in many different circuits. Its low impedance capabilities provide effective voltage regulation and its voltage reference characteristics allow it to serve as a reliable voltage reference source. Its Zener breakdown effect also allows it to protect circuits from damage caused by overvoltage conditions. The 1N5333B is a popular choice for power management applications and is widely used in applications such as voltage regulation, protecting against overvoltage, and providing voltage references.

The specific data is subject to PDF, and the above content is for reference

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