1N5367B/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	43V
Tolerance:	±5%
Power - Max:	5W
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 31V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 1A
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	T-18, Axial
Supplier Device Package:	T-18
Base Part Number:	1N5367

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1N5367B/TR12 Application Field and Working Principle

The 1N5367B/TR12 is a type of single Zener diodes used widely in many electronic products. The most common application field of this diode is the circuit design to provide a stabilized reference voltage and to protect components from the changes by regulating current. Moreover, this device is known for its high power handling capability and wide range of operating temperature.

Structure of 1N5367B/TR12

It is a two-terminal electronic device produced in various package formats. It is mostly produced in the dual in-line package (DIP) and surface mount package (SMP). It belongs to the family of discrete semiconductor components. The structure of this diode consists of specially treated crystalline silicon within an epoxy casing.To achieve the specific operations, the semiconductor material is generally heavily doped with electron donors and acceptors. This doping allows the electrons to move within a conduction band as well as to provide the necessary electrical properties in the device.

Working Principle of 1N5367B/TR12

The 1N5367B/TR12 diode is a Zener diode with a reverse breakdown voltage, or Zener voltage. By applying a reverse bias to the junction, an electric field is created, which in the ideal case leads to a constant voltage, the breakdown voltage.Due to the voltage applied to the device, electrons in the conduction band will be pushed across the junction to the other side of the diode. This occurs until the applied reverse bias is strong enough to completely deplete the electrons from the depletion region and break down the junction.The breakdown of the junction is responsible for Zener voltage and voltage regulation. Above the Zener voltage, the current passing through the junction increases according to Ohm\'s law. This current, along with the voltage across the diode, causes a rise in the diode’s temperature.The higher the temperature, the lower the breakdown voltage of the diode, so technically this increases the voltage regulation and dynamic resistance of the device. Therefore, since voltage regulation and dynamic resistance are temperature-dependent, the manufacturer must make sure that the breakdown current of the device stays within the specified limits to ensure long-term stability of the diode.

Applications of 1N5367B/TR12

The 1N5367B/TR12 are usually used in electronics in the following situations:1. Voltage regulation in power supplies, as they can maintain a steady voltage in the circuit under varying current and power conditions.2. Voltage Protection, since the device is able to limit the voltage passed to then next component in the circuit, thus protecting it from sudden surges.3. Overvoltage protection, as the device is able to clamp the voltage to a certain pre-defined level.4. Rectification, as the 1N5367B/TR12 can be used as a rectifying diode, allowing only the positive voltage to pass through the junction.5. Surge protection, as the 1N5367B/TR12 can be used to protect sensitive electronic devices from powerful surges, thereby protecting them from damage.6. DC-DC conversion, as the device is able to convert AC signals into DC signals, providing a steady DC supply to the next component in the circuit.7. Sampling, as the 1N5367B/TR12 can be used to sample the voltage output of a circuit, converting it into a digital signal.8. Signal Powering, as the device can be used to power the signal coming from a circuit prior to amplification.

Advantages of 1N5367B/TR12

The 1N5367B/TR12 diode offers several advantages, such as:1. High power handling capability2. Low leakage with low reverse leakage current3. Wide range of operating temperature4. Low noise generation due to low capacitance5. Stability over different conditions6. Low power consumption7. Low forward voltage drop8. Availability in both SMD and through-hole packages

Disadvantages of 1N5367B/TR12

The 1N5367B/TR12 diode also has some disadvantages. Some of the most relevant ones are:1. Low reverse breakdown voltage2. Temperature dependence of the breakdown voltage3. Poor linearity of the output current-voltage characteristics4. Peak current limitations due to the devices small size and area5. Poor power dissipation capability6. Stability under reverse voltage is poor

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