1N5379/TR12 Allicdata Electronics
Allicdata Part #:

1N5379/TR12-ND

Manufacturer Part#:

1N5379/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 110V 5W T18
More Detail: Zener Diode 110V 5W ±20% Through Hole T-18
DataSheet: 1N5379/TR12 datasheet1N5379/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±20%
Power - Max: 5W
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 79.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5379
Description

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1N5379/TR12 Application Field and Working Principle

1N5379/TR12 is a 1W Zener diode designed for stabilizing voltages and providing isolation between circuits.

This Zener diode type is a single, small signal diode with a power dissipation of 1 W. It is popularly used in circuits that require a small signal diode that can handle high current, such as audio and power applications. Often times they are used to stabilize voltage and provide isolation between circuits.

The 1N5379/TR12 features a traditional silicon PN junction diode, with reverse voltage ratings from 2.4V to 240 V and power dissipation ratings up to 1 W. This Zener diode is manufactured with a low-temperature coefficient for excellent stability, a low-leakage reverse current for stable performance, and a maximum junction temperature of 150°C for better heat dissipation.

The working principle of a 1N5379/TR12 can be described as follows: when the diode is forward biased, it conducts current in the forward direction, allowing electrons to flow from the N type material to the P type material. When the diode is reverse-biased, the amount of current that can flow through the device decreases due to the electrical field created by the reverse bias. This phenomenon prevents excessive current, which can damage the device. In Zener diodes, the reverse-biased electrical field is further enhanced to create a "breakdown" effect. When the voltage across the diode exceeds a certain threshold, the electrical field causes electrons to be "knocked" across the junction and conducted in the reverse direction.

The 1N5379/TR12 is commonly used for a variety of applications, including voltage regulation, power supply protection, ESD protection, and signal line protection, among others. It is most often utilized in audio and power applications because its low-temperature coefficient and low-leakage reverse current offer excellent stability and performance. It is also an excellent choice for voltage regulation because its reverse breakdown capability allows it to

regulate the voltage across its terminals.

The 1N5379/TR12 is a highly-versatile single Zener diode that can be used for a variety of applications due to its excellent stability and low-temperature coefficient of operation. It is excellent for voltage regulation, power supply protection, ESD protection, and signal line protection due to its reverse breakdown capability, which allows it to regulate the voltage across its terminals.

The specific data is subject to PDF, and the above content is for reference

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