Allicdata Part #: | 1N5391G-T-ND |
Manufacturer Part#: |
1N5391G-T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 50V 1.5A DO15 |
More Detail: | Diode Standard 50V 1.5A Through Hole DO-15 |
DataSheet: | 1N5391G-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-15 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N5391 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N5391G-T is a single rectifier diode that is designed to handle moderate current requirements typical of Filters, Low-Voltage Power Supplies, Rectifiers, and other applications. As a single rectifier diode, it is constructed from two PN junction materials, making it ideal for operating in any FR4, phenolic, or other PCB materials. Its average forward current is 2 to 20A with a maximum reverse voltage of 1000V.
As with all diodes, the 1N5391G-T functions by allowing current to pass in one direction, while blocking it in the opposite direction. It consists of two layers of semi-conductor material, which are connected together at their ends. When these layers are connected to an external voltage source, electrons flow from the negative to the positive side, and the diode becomes an open path in the circuit. In reverse bias, the diode blocks current and only allows small leakage current to pass.
The breakdown voltage of the 1N5391G-T is 800V and its maximum reverse voltage is 1000V, allowing it to handle high power applications. The breakdown current of the 1N5391G-T is high, making it very suitable for low voltage power supply, full wave rectification and power electronic applications. Its higher reverse threshold voltage enables high frequency switching and allows for full-wave rectification.
In addition to its high breakdown voltage, the 1N5391G-T also offers excellent junction temperature stability and low leakage current. The low gate charge allows for a low quiescent current, making it suitable for high frequency switching applications. It also features a low thermal resistance, allowing it to handle high power without significantly increasing its temperature.
The 1N5391G-T is the perfect choice for electronic components that require low power applications. With its high breakdown voltage, excellent junction temperature stability, and low gate charge, the 1N5391G-T is able to handle moderate current requirements for various types of power supplies and rectifiers. Thanks to its low thermal resistance, it is able to handle high power with minimal temperature increases. Additionally, its higher reverse voltage enables it to switch at higher frequencies, making it ideal for rectification and power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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