1N5392S-T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	1.5A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 1.5A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	5µA @ 100V
Capacitance @ Vr, F:	20pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-41
Operating Temperature - Junction:	-65°C ~ 150°C
Base Part Number:	1N5392

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Introduction

The 1N5392S-T is a rectifier diode developed by American corporation NXP Semiconductors. It is a single, 4-pin device that is constructed from epitaxial silicon and uses the latest technology in the manufacturing process. This diode is capable of withstanding high voltage and power levels, making it suitable for a wide range of applications and power supplies. In this article, we will discuss the application field and working principle of 1N5392S-T.

Application Field

The 1N5392S-T is a versatile device and suitable for a wide range of applications. It is primarily used for high-voltage rectification in switching and linear power supplies, automotive electronics, and photovoltaic applications. They can be employed in the manufacturing of power tools, welding machines, televisions, radios, DVD players, automotive units, and more. These diodes are also used in medical and industrial equipment, where they are employed to suppress voltage spikes and improve the reliability of motors and circuits.

Working Principle

The 1N5392S-T is a rectifier diode, which acts as a one-way valve for electrical current. It consists of a cathode and an anode, and when forward biased, current is allowed to flow in a single direction. When the diode is reverse biased, the current flow is blocked. This allows the diode to function as a switch, and when used in circuits, can perform a wide range of tasks such as voltage regulation, inversion, and rectification.The 1N5392S-T is a high-voltage rectifier that can withstand high power levels, making it suitable for a wide range of applications. It uses the latest technology in the manufacturing process to ensure the highest quality and reliability. The device is also able to withstand thermal shock and handle high junction temperatures. Additionally, it has a low reverse leakage current and is capable of withstanding high reverse voltage.

Conclusion

The 1N5392S-T is a versatile device developed by NXP Semiconductors and is suitable for a wide range of applications. It is a single, 4-pin rectifier diode that is constructed from epitaxial silicon and uses the latest technology in the manufacturing process. This diode is capable of withstanding high voltage and power levels, making it ideal for high-voltage rectification in switching and linear power supplies, automotive electronics, and photovoltaic applications. The 1N5392S-T is a reliable device that is able to withstand thermal shock, high junction temperatures, and high reverse voltage.

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