1N5393S-T Allicdata Electronics
Allicdata Part #:

1N5393S-T-ND

Manufacturer Part#:

1N5393S-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 200V 1.5A DO41
More Detail: Diode Standard 200V 1.5A Through Hole DO-41
DataSheet: 1N5393S-T datasheet1N5393S-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: 1N5393
Description

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The highly efficient 1N5393S-T rectifier is used in various fields and applications, thanks to its wide range of operating parameters, low forward voltage drop and fast response time. The device is also capable of operating with both low and high reverse current voltages. The 1N5393S-T diode is mainly used in power supplies, converters, dual and isolation circuits, overvoltage protection circuits, and snubber circuits.

Overview of the 1N5393S-T

The 1N5393S-T belongs to the STMicroelectronics’ 1N5393S rectifier family. It is a single-phase, 3A (average), 40V rectifier, housed in the DO-201AD plastic package. Its forward voltage drop at 20A is less than or equal to 0.85V. The diode has a high surge current rating of lesser than or equal to 320A and its operating junction temperature is - 55 to + 150 degrees Celsius.

Working Principle of the 1N5393S-T

The 1N5393S-T operates in two distinct power modes; forward conduction mode and reverse blocking mode. In forward conduction mode, the electrodes of the diode are forward biased and current flows through it. The current-voltage characteristics of a silicon diode indicate that the voltage of the device decreases as the current through it increases. This phenomenon is called “Forward Voltage Drop”.

In the reverse blocking mode, the electrodes of the 1N5393S-T are reverse biased and no current flows through the device. The device provides a high blocking voltage that prevents current from flowing. The reverse recovery time and reverse avalanche energy of the diode are also quite low, resulting in less power dissipation.

Applications of the 1N5393S-T

The 1N5393S-T is used in a variety of applications. The device is used in power supplies, converters, and dual and isolation circuits for EMI or surge protection. It is also used in overvoltage & over-current protection circuits, snubber circuits and automotive lighting circuits, for example, for vehicle turn signals or rear fog lights.

Its wide operating parameters, low voltage drop and fast response time also make it suitable for use in switching power supplies, DC-DC converters, bridge circuits and power management systems. In addition, the device is suitable for use in high ripple current applications such as motors and inverters.

Features of the 1N5393S-T

The 1N5393S-T diode offers many features to its users. It has a low forward voltage drop, making it more efficient. The device features a low reverse current voltage and its reverse blocking voltage is higher than its forward voltage drop. The device has a low reverse recovery time and reverse avalanche energy, resulting in less power dissipation. Its hermetically sealed construction ensures high reliability and long operational life. Furthermore, the device has a wide range of operating temperatures (- 55 to + 150 degrees Celsius) and can withstand surge currents of up to 320A.

The specific data is subject to PDF, and the above content is for reference

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