1N5397G-T Allicdata Electronics
Allicdata Part #:

1N5397G-TDITR-ND

Manufacturer Part#:

1N5397G-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 600V 1.5A DO15
More Detail: Diode Standard 600V 1.5A Through Hole DO-15
DataSheet: 1N5397G-T datasheet1N5397G-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5397
Description

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Introduction: The 1N5397G-T is a single-phase silicon rectifier diode. As a general-purpose diode, it has wide applications in various electrical and electronic devices. It has a wide range of reverse voltage; excellent temperature coefficient; and fast switching times, making it a reliable and versatile device.

Application Field: The 1N5397G-T is mainly used in the fields of switching power supplies, DC-DC converters, high voltage rectifiers and photovoltaic systems. It can provide protection against direct lightning strikes in power distribution systems, and can also be used as a free-wheeling diode in motor drives. In addition, it can be used as a voltage limiter for protecting electrical components from high-voltage transients.

Working Principle: This device is a basic semiconductor device composed of a junction between a p-type semiconductor and an n-type semiconductor. In a forward-biased condition, electrons are injected from the n-side to the p-side, and some electrons from the valence band on the p-side move to the conduction band, resulting in a current flow from the p-side to the n-side. When reverse voltage is applied, holes are injected from the p-side to the n-side. Due to the built-in electric field, the carriers are repelled and the diode is in a reverse blocking condition. It is called a rectifier diode because it only allows current flow in one direction.

Summary: The 1N5397G-T is a single-phase silicon rectifier diode which has a wide array of applications in various electrical and electronic devices. It is mainly used in switching power supplies, DC-DC converters, high voltage rectifiers and photovoltaic systems. The basic principle of operation is the built-in electric field which allows current to flow only in one direction.

The specific data is subject to PDF, and the above content is for reference

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