Allicdata Part #: | 1N5399G-T-ND |
Manufacturer Part#: |
1N5399G-T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1.5A DO15 |
More Detail: | Diode Standard 1000V 1.5A Through Hole DO-15 |
DataSheet: | 1N5399G-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-15 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N5399 |
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Diodes - Rectifiers - Single
The 1N5399G-T is a general purpose silicon rectifier that has various applications across many fields. It is designed to provide high current and reverse voltage protection in a variety of electrical and electronic systems, ranging from industrial, automotive, and consumer electronics.
The 1N5399G-T is a single rectifier built with a silicon epitaxial planar technology and is housed in an industry standard DO-41 package. It offers up to 600V of continuous reverse voltage protection, up to 4A maximum average forward current operation, and up to 4A peak repetitive forward current on the 1N5399G-T. This makes it suitable for various applications, from low-current automotive circuit protection to high-current power supply regulation in industrial applications.
This product has a maximum thermal resistance of 90°C/W and an ambient operating temperature rating between -55°C and +125°C, making it suitable for high temperature applications. It also has a second breakdown rating of emitter-to-collector voltage, Vcex, of 90V, which provides high reliability and enables it to operate safely under high-voltage environments.
The working principle of the 1N5399G-T is fairly standard and simple. When current is passed through the 1N5399G-T\'s anode, it will open and allow the current to pass through the 1N5399G-T, forming a reverse current path from the anode to the cathode, allowing the reverse voltage to be conducted. Meanwhile, the 1N5399G-T also provides a low impedance path for the forward current to pass through, allowing it to regulate the current and voltage levels in the circuit. This allows the 1N5399G-T to provide the necessary protection for a circuit.
The 1N5399G-T can be used for a wide range of applications, from automotive and industrial applications, to consumer electronics. It is also suitable for high-current applications due to its high-power ratings, which makes it suitable for power supplies with high current requirements.
In summary, the 1N5399G-T is a general purpose silicon rectifier that is ideal for automotive, industrial and consumer electronics applications. It offers up to 600V of continuous reverse voltage protection, up to 4A maximum average forward current operation and up to 4A peak repetitive forward current. It has a maximum thermal resistance of 90°C/W, an ambient operating temperature rating between -55°C and +125°C, and a second breakdown rating of emitter-to-collector voltage, Vcex, of 90V. Overall, it is suitable for a wide range of applications that require high current protection.
The specific data is subject to PDF, and the above content is for reference
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