Allicdata Part #: | 1N5719-ND |
Manufacturer Part#: |
1N5719 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN GEN PURP SW 150V AXIAL |
More Detail: | RF Diode PIN - Single 150V 100mA 250mW |
DataSheet: | 1N5719 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 150V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 100V, 1MHz |
Resistance @ If, F: | 1.25 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | -- |
Base Part Number: | 1N5719 |
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The 1N5719 is a type of opaque, high-speed switching diode designed for Radio Frequency (RF) applications. It is manufactured by a number of leading diode manufacturers, including Siliconix Inc. and Texas Instruments. It is characterized by a very low reverse leakage current and a high definition of RF parameters. The 1N5719 is used in a variety of radio frequency circuits, such as radio frequency switches, phase detectors, modulators, and amplifiers. In this article, we will discuss the application field and working principle of 1N5719 diode.
The 1N5719’s main application field is in RF switching; it can switch signals at frequencies up to 10 GHz, making it an ideal choice for applications that require high frequency, yet low noise operations. Its high definition of RF parameters and low reverse leakage current make it an excellent choice for applications that require precision and accuracy. It is also used in phase detectors, modulators, and amplifiers. The diode is ideal for use in a wide range of RF circuits because of its low forward voltage drop, high input impedance, and low reverse leakage current.
The working principle of the 1N5719 diode is based on the process of reverse-biasing a diode. When the diode is reverse-biased, the depletion layer width increases, allowing current to flow from the anode to the cathode. The reverse leakage current of the 1N5719 diode is very low and its high-speed switching characteristics make it an ideal choice for applications that require low noise operations. When the 1N5719 is forward biased, it acts as a DC rectifier, allowing only the positive current to pass through.
The 1N5719 diode can be used in linear or single-ended applications, and can handle RF signals up to 10GHz. It is also ideal for use in digital systems, as it provides a low-impedance path for high-speed signals. The diode is also excellent for applications that require precision and accuracy, as it has a low temperature coefficient and low reverse leakage current. Additionally, its high input impedance makes it suitable for use in RF circuits.
In summary, the 1N5719 is a high-speed switching diode designed for Radio Frequency (RF) applications. It is most commonly used in radio frequency switches, phase detectors, modulators, and amplifiers due to its low reverse leakage current and high definition of RF parameters. The diode is also ideal for use in digital systems as it can handle RF signals up to 10GHz and its low temperature coefficient and low reverse leakage current make it an excellent choice for precision and accuracy.
The specific data is subject to PDF, and the above content is for reference
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