1N5711W-7-F Discrete Semiconductor Products |
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Allicdata Part #: | 1N5711W-FDITR-ND |
Manufacturer Part#: |
1N5711W-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 70V 333MW SOD123 |
More Detail: | RF Diode Schottky - Single 70V 15mA 333mW SOD-123 |
DataSheet: | 1N5711W-7-F Datasheet/PDF |
Quantity: | 237000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 70V |
Current - Max: | 15mA |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 333mW |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | 1N5711 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are a crucial component of any electrical circuit, with representations of semiconductors planned for different voltage and current levels, as well as for distinct frequencies. That said, RF diodes, also known as radio frequency diodes, carry a set of distinct characteristics from other types of diodes. The 1N5711W-7-F also stands as one of these specific devices. The application fields and working of 1N5711W-7-F are discussed throughout this article.
Application Fields
The 1N5711W-7-F RF diode is primarily used in the range frequency of 6GHz, mostly for the purpose of communications. It has a breakdown voltage of 6V and a current capacity of 12mA. This makes it especially apt for small-scale communication enterprises, allowing a highly efficient and fast operation. In addition, the 1N5711W-7-F also performs an input level control technique, which serves as ideal for any antenna receiver operation. This diode is also frequently used as a switching device in the operation of microwave ovens.
Working Principle
At its core, the 1N5711W-7-F follows the same principles of any diode. It follows a diode current-voltage characteristic, and therefore, once a certain voltage point is achieved, a current will be produced. As for its operation and efficiency, it relies on a reverse-biased conduction. This helps the diode operate more effectively, as the current is usually higher through the diode when it is reverse-biased compared to the presence of only the forward bias. The 1N5711W-7-F, however, has its own unique characteristics, which helps it function as an especially ideal diode in any radio frequency domains. It has a low junction capacitance of 1.75pf and a low noise figure, which makes it ideal for any incoming signal transmissions, including microwave ovens. Furthermore, it has a good reverse recovery time, which proves efficient at controlling the frequency range.
Conclusion
The 1N5711W-7-F has a wide variety of uses, most of which tend to be in the communications field. The 6V breakdown voltage and 12mA current capacity make it ideal for certain types of antennas, which helps to ensure that the signals coming into the system do not suffer any interferences. Moreover, it is also ideal within the context of a switch, as it has a low noise figure and the junction capacitance is also low. All in all, the 1N5711W-7-F serves a great variety of functions in the field of radio frequency, all of which are highly efficient.
The specific data is subject to PDF, and the above content is for reference
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