Allicdata Part #: | 1N5732B-ND |
Manufacturer Part#: |
1N5732B |
Price: | $ 1.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.8V 500MW DO35 |
More Detail: | Zener Diode 6.8V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5732B Datasheet/PDF |
Quantity: | 1000 |
511 +: | $ 1.13447 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 4V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5732 |
Description
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The 1N5732B Zener Diode is a single component that is used to regulate or rectify electrical flow in an electrical circuit. It is a component of the PN junction diode family, which is made of a semiconductor material with two distinct layers. The layers act as a junction that can be reversed when a force is applied, allowing current to flow in either direction. The 1N5732B Zener Diode provides many advantages, including a low voltage breakdown, high current-carrying capacity and good surge protection.In its most basic form, the current flow in the 1N5732B Zener Diode is the same as the flow in an ordinary PN junction diode. However, when the voltage across the diode reaches the "zener voltage," the diode breaks down, allowing an increased current flow. This breakdown occurs because of the presence of a thicker N-type region between the two P-type layers, creating what is known as a "reverse breakdown region." The current flow in this region is heavily dependent on its behavior under a reverse-biased condition.The application of the 1N5732B Zener Diode is quite varied, but the most common one is for the regulation of the electrical supply line. It is often placed in a series with a resistor or a current sensing diode, allowing it to control the flow of current from the power source. This ensures that the voltage is maintained at a given level and prevents overloaded electrical components. In addition, it can be used to protect sensitive electronic components from short circuits or voltage spikes.The working principle behind the 1N5732B Zener Diode is quite simple. When under normal non-inductive conditions, the diode behaves in the same manner as a regular PN junction diode. However, when a voltage in excess of the "zener voltage" is applied, the diode changes its characteristics. The current through the diode begins to increase rapidly, allowing a high current flow, even after the applied voltage is reduced to its normal voltage level. This is due to the presence of a "reverse breakdown" region in the 1N5732B Zener Diode. Through the interaction of the two distinct layers, the current-carrying capacity of the diode is increased, allowing for better control of the electrical flow.In conclusion, the 1N5732B Zener Diode is a single component that is used to regulate or rectify electrical flow in an electrical circuit. Its most common application is for the regulation of the electrical supply line and for the protection of sensitive electronic components from short circuits or voltage spikes. Its working principle is based on the presence of a reverse breakdown region, which allows for an increased current flow. All in all, the 1N5732B Zener Diode is an important component in many electrical circuits and is a valuable tool for electronic engineers.
The specific data is subject to PDF, and the above content is for reference
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