Allicdata Part #: | 1N5736C-ND |
Manufacturer Part#: |
1N5736C |
Price: | $ 2.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 10V 500MW DO35 |
More Detail: | Zener Diode 10V 500mW ±1% Through Hole DO-35 |
DataSheet: | 1N5736C Datasheet/PDF |
Quantity: | 1000 |
256 +: | $ 2.39860 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 7V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5736 |
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A Zener diode is a device that exploits the electrical characteristics of a reverse-biased P/N junction to allow current to flow in the forward direction consisting of two pieces of semiconductor material, such as silicon and germanium, forming a junction. These two pieces of semiconductor need to have different doping concentrations, and are connected to each other with a conducting material, usually lead or aluminum. When the forward voltage is applied to the Zener diode, the difference in doping concentration causes the electrons of the semiconductor material to flow from the junction along the potential gradient.
1N5736C is an axial leaded Zener diode, used for voltage regulation and a number of other applications such as power stabilization and noise rectification. 1N5736C features a wide operating voltage range that can be adjustable from 1.2 to 36 volts, making it suitable for use in a variety of battery and power supply designs. 1N5736C also features a high breakdown voltage of up to 45 volts and a large peak current, making it an ideal component for surge protection, clamping and low-voltage regulation. 1N5736C is a low-cost component, making it ideal for consumer applications.
The working principle of any Zener diode relies on the behavior of a P/N junction diodes when the P-type material and the N-type material are connected together. This causes a depletion region which occupies the junction and prevents the majority of current to flow when the P-side and N-side of the junction are connected to a voltage source. When a reverse bias voltage is applied across the diode, an electric field is created which forces the electrons to move across the depletion region to the P-type material. This creates a large number of electron-hole pairs, also known as minority carriers, across the depletion region. The reverse bias voltage can be increased until the electric field being created is greater than the built-in potential barrier of the P/N junction, and at this point, the electrons will be able to flow across the junction and the Zener diode will begin to conduct.
A 1N5736C Zener diode is ideally suited for applications that require low voltage regulation, such as power supplies and low power voltage reference circuits. It can also be used for AC to DC conversion, noise filtering, surge protection and regulation of consumer electronics. The 1N5736C’s wide operating voltage range of 1.2 to 36 volts and high breakdown voltage of up to 45 volts make it a good choice for power supplies and electronics that operate on large voltages.
In summary, 1N5736C is an axial leaded Zener diode that is used for a variety of applications that require low voltage regulation. It has a wide operating voltage range of 1.2 to 36 volts, a high breakdown voltage of up to 45 volts and a large peak current, making it a suitable component for surge protection, clamping and low-voltage regulation. In addition, 1N5736C is a low-cost component, making it an ideal choice for consumer applications.
The specific data is subject to PDF, and the above content is for reference
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1N5730C | Microsemi Co... | 2.67 $ | 1000 | DIODE ZENER 5.6V 500MW DO... |
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