1N5741C Allicdata Electronics
Allicdata Part #:

1N5741C-ND

Manufacturer Part#:

1N5741C

Price: $ 2.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 16V 500MW DO35
More Detail: Zener Diode 16V 500mW ±1% Through Hole DO-35
DataSheet: 1N5741C datasheet1N5741C Datasheet/PDF
Quantity: 1000
256 +: $ 2.39860
Stock 1000Can Ship Immediately
$ 2.67
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 11V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5741
Description

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Diodes - Zener - Single

A Zener diode is a two-terminal semiconductor device that exhibits a specific reverse breakdown voltage. This breakdown voltage of a Zener diode is invariant regardless of the device’s application. Typically, the forward voltage drop of a Zener diode is around 0.5V to 6V, though some devices with higher values of forward bias voltage have been created. One such device is the 1N5741C, which offers a zener breakdown voltage of 10V.

1N5741C Application Field

Because of its reverse breakdown voltage of 10V, the 1N5741C is a commonly used diode for regulating power sources. It functions as a voltage regulator that prevents voltage from going higher than its breakdown value. As a result, engineers use the 1N5741C to reduce the power source voltage to the desired level. This diode can also be used in various electronic circuits such as logic and power conversion systems, relays, and DC to DC converters.

1N5741C Working Principle

The 1N5741C is constructed of a N-type semiconductor material that is doped with impurities. As a result of this doping, there exist two regions – the P-type and the N-type – within the semiconductor material. The P-type region is created by dopant atoms that possess extra electrons, while the N-type region is formed by the addition of other dopant atoms that have fewer electrons. The P-N junction is formed when these two regions touch each other. When electric current is applied to the 1N5741C, the electrons in the N-type region are moved across the junction to the P-type region. Conversely, holes in the P-type region move toward the N-type region.

When this current is below the Zener breakdown voltage, the electric current only passes through the Zener diode in one direction, and the Zener diode functions as a normal diode. However, when a higher voltage is applied to the 1N5741C, the breakdown voltage of the diode is exceeded, causing a short circuit. This short circuit allows electrons to pass in both directions through the diode, thereby regulating the voltage and protecting the circuit elements.

The 1N5741C Zener diode is a useful and versatile semiconductor device that can be used in numerous applications. It can regulate the power source voltage to the desired value and protect the circuit elements from voltage surges. Owing to its excellent performance and reliable operation, the 1N5741C is extensively used in a variety of power conversion and voltage controlling systems.

The specific data is subject to PDF, and the above content is for reference

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