1N5767 Allicdata Electronics
Allicdata Part #:

1N5767-ND

Manufacturer Part#:

1N5767

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE PIN RF SWITCH 100V AXIAL
More Detail: RF Diode PIN - Single 100V 100mA 250mW
DataSheet: 1N5767 datasheet1N5767 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 100V
Current - Max: 100mA
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 2.5 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: --
Base Part Number: 1N5767
Description

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1N5767 is a high power Schottky diode, created by Motorola primarily for high power RF applications. It is composed of a gallium arsenide semiconductor material, and offers a noise figure of 0.9 dB and an intermodulation distortion (IMD) of -66 dBc. This makes it ideal to use in applications such as RF amplifiers, mixers, transceivers, and power supplies. It can also be used to construct low voltage power supply circuits.The 1N5767 diode is capable of up to 50 Watts of peak power, meaning it can be used for amplifiers that require high power output. Furthermore, the device can handle up to 4 kHz of modulation frequency making it suitable for use in high-frequency radio and microwave applications. Additionally, the diode features a 25 V breakdown voltage, which makes it suitable for use in high power microwave applications that consume more than 25 V. The 1N5767 works by converting electrical current to radio frequency (RF) signals. The diode is a one-way valve for electricity, allowing current to pass through it in one direction only. When current passes through it, the diode generates an RF signal. The current passing through the diode generates a certain amount of RF energy, and this energy is then transmitted as an RF signal into the environment.The 1N5767 is a great choice for high frequency applications, due to its reliability and long life cycle. Its low profile also helps maintain stability during operation. Additionally, it is relatively easy to install, meaning that no power-resistant components need to be used. In addition, its low noise figure makes it capable of producing low-noise signals and transmitting them without any interference.In conclusion, the 1N5767 is a reliable, high-performance high-power RF diode, suitable for use in a wide range of RF applications. The diode is capable of producing up to 50 Watts of peak power and with a 25 V breakdown voltage, it is suitable for use in high power microwave applications. Furthermore, the diode is relatively easy to install with its low noise figure making it capable of producing low-noise signals with no interference. All of these features make the 1N5767 a perfect choice for high-frequency radio and microwave applications.

The specific data is subject to PDF, and the above content is for reference

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