1N5924B G

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The 1N5924B G Zener diode is a semiconductor device designed to provide electrical current limitation and voltage stabilization. It is comprised of a single junction, Zener diode with an integrated guard ring structure for indexing and operating performance. This device is ideal for applications for those requiring a low leakage current, a low power dissipation, and a low voltage drop.

The 1N5924B G has a wide range of applications. The most common application is in the design of power supplies and voltage regulation circuits. It can be used to limit the voltage and current in a circuit and to prevent one device from exceeding its normal specifications. It also provides overload protection to protect components from damage caused by over-current or excessive voltage. It can also be used in communications equipment, computer systems, industrial and medical applications, and automotive electronics.

This Zener diode operates under the principle of avalanche breakdown of the pn-junction. This is achieved when a bias voltage is applied to the pn-junction, and the device begins to conduct current. This current will increase due to the increase in voltage and will eventually reach the breakdown voltage. At this point, the voltage across the diode does not increase further, though the current remains constant.

The 1N5924B G has a breakdown voltage of 12V and can handle a maximum current of 1A. It has a nominal operating temperature of -55°C to +150°C. The operating temperature range is -65°C to +170°C. It also has a failure rate of approximately 0.05% at +105°C. This device is also UL recognized and has a lead frame material of copper.

The 1N5924B G is suitable for use in applications where it is essential to provide electrical current limitation and voltage stabilization. Its simple construction and low power dissipation make it attractive for a wide range of applications. It is also cost effective and a reliable solution for many power electronics systems.

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