1N5951D

Series:	*
Part Status:	Active

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5951D is a silicon, chip, planar, Zener diode, it is a single-junction diode specifically designed for use as an avalanche protector in low voltage circuits. It is ideally suited for gate drive, general protection and logic level input protection applications.The 1N5951D Zener Diode has a very low power dissipation, a wide range of working voltages and a wide range of clamping voltages. The breakdown voltage varies from 20 to 85 volts depending on the device. The device also has low leakage current at various reverse voltages. The devicThe 1N5951D avalanche diode has a built-in avalanche diode structure that can detect abnormally high voltage, current, or frequency and automatically clamp high voltage. It has a non-polarized type of structure, which allows for a wide range of input voltage range and minimizes the risk of leakage. The avalanche diode structure of the 1N5951D Zener Diode creates a basic Wheatstone bridge circuit. When a reverse bias is applied to the diode, the voltage applied to the diode will cause current to flow towards the reverse bias. This current will travel through the junction and, if the voltage is high enough, will cause avalanche breakdown. A Zener diode avalanche breakdown occurs when the applied voltage exceeds the breakdown voltage of the diode. The 1N5951D Zener Diode has a typical avalanche breakdown voltage of 85 Volts at a device temperature of 25 degrees Celsius. The breakdown voltage will decrease with increasing temperature. The temperature coefficient of the diode’s breakdown voltage is usually -2 Volts per degree Celsius. The typical forward voltage for the 1N5951D Zener Diode is between 0.5 and 0.65 Volts at a device temperature of 25 degrees Celsius. This voltage will also decrease with an increase in temperature. The maximum forward voltage is 0.8 Volts. The reverse currents for the device are in the milliampere range and decrease as the applied voltage increases. The 1N5951D Zener diode can be used in several different applications. It can be used in gate drive circuits to switch on and off higher voltage circuits, as well as in logic level input protection circuits. It is also well suited for general circuit protection applications, where a dramatic clamping effect is required when a voltage exceeding a core threshold is detected. The 1N5951D Zener Diode is also used as an avalanche detector in automotive power train control circuits.The 1N5951D Zener Diode is available in a variety of packaging types, such as through-hole, surface mount, and leadless chip carriers (LCCs). This provides designers with flexible solutions for their various application needs. In conclusion, the 1N5951D Zener Diode is a single-junction diode designed for use as an avalanche protector in low voltage circuits. It has a non-polarized type of structure, a wide range of working and clamping voltages, as well as a low reverse leakage current. The 1N5951D is available in various packaging types, making it well suited for a wide variety of applications, including gate drive, general protection, and logic level input protection.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description