1N5932BRNG Discrete Semiconductor Products |
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Allicdata Part #: | 1N5932BRNGOSTB-ND |
Manufacturer Part#: |
1N5932BRNG |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 20V 3W DO41 |
More Detail: | Zener Diode 20V 3W ±5% Through Hole DO-41 |
DataSheet: | 1N5932BRNG Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.17553 |
6000 +: | $ 0.16342 |
15000 +: | $ 0.16141 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 14 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 15.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Base Part Number: | 1N5932 |
Description
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Introduction: 1N5932BRNG Application Field and Working Principle
The 1N5932BRNG is a single Zener diode from the 1N5900 series manufactured by Lite-On Semiconductor. It can be used for a variety of applications such as voltage regulation, current regulation, reverse isolation, power tracking, and over-voltage protection. This diode has a maximum reverse current of 25 uA, a maximum forward current of 200 mA, a reverse breakdown voltage of 6.2 Volts, and an operating temperature range of -65°C to +155°C.What is a Zener Diode?
A Zener diode is a particular type of diode which has a very high reverse breakdown voltage. It is designed to conduct in the reverse direction when a certain pre-determined voltage is exceeded. It is used to regulate the voltage across a circuit, to stabilize voltage levels, or to create a constant voltagesource.Applications of 1N5932BRNG
1N5932BRNG can be found in a variety of applications including voltage regulation, current regulation, reverse isolation, power tracking, and over-voltage protection. • Voltage Regulation: Zener diodes, including the 1N5932BRNG, can be used for voltage regulation by providing a constant voltage across a circuit, regardless of changes in current, temperature or input voltage.• Current Regulation: The 1N5932BRNG can also be used for current regulation by limiting the current flowing through a circuit. The forward voltage is not affected by the current flowing through the circuit, which allows the current to be limited in a stable manner.• Reverse Isolation: 1N5932BRNG Zener diodes can be used to isolate a circuit from undesired input signals, preventing them from influencing the operation of the circuit.• Power Tracking: Zener diodes, such as the 1N5932BRNG, can be used to regulate the output power of a circuit by ensuring that the output power stays within a given range, regardless of changes in input voltage or current.• Over-Voltage Protection: The 1N5932BRNG can also be used for over-voltage protection in a circuit. When the input voltage exceeds the reverse breakdown voltage of the diode, the diode will conduct, thus limiting the voltage across the circuit, and preventing any damage to the components of the circuit.Working Principle of 1N5932BRNG
The 1N5932BRNG works on the principle of rate of change of current (ROC) or avalanche breakdown. When the reverse voltage applied to the diode exceeds the breakdown voltage, the electrons in the depletion layer around the P-N junction gain energy and start to move in the opposite direction, as electrons and holes recombine. This current flow continues until the junction is re-stabilized.Conclusion
The 1N5932BRNG is a single Zener diode from the 1N5900 series made by Lite-On Semiconductor. It has a maximum reverse current of 25 uA, a maximum forward current of 200 mA, a reverse breakdown voltage of 6.2 Volts, and an operating temperature range of -65°C to +155°C. The 1N5932BRNG can be used for voltage regulation, current regulation, reverse isolation, power tracking, and over-voltage protection. The 1N5932BRNG works on the principle of rate of change of current (ROC) or avalanche breakdown, where when the reverse voltage applied to the diode exceeds the breakdown voltage, the electrons in the depletion layer around the P-N junction gain energy and start to move in the opposite direction, as electrons and holes recombine.The specific data is subject to PDF, and the above content is for reference
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