1N5942P/TR8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	51V
Tolerance:	±20%
Power - Max:	1.5W
Impedance (Max) (Zzt):	70 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 38.8V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	1N5942

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Diodes - Zener - SingleA zener diode is a specialized type of semiconductor diode that features a breakdown (breakover) voltage that is close to a specified reference (clamping) voltage. A 1N5942P/TR8 is a current-controlled electrically controlled transistor designed for use in computer and telecommunication applications. This article examines the application field and working principle of the 1N5942P/TR8.The 1N5942P/TR8 is commonly used for high-precision circuits, instrumentation, and power supply applications. It offers superior performance when used to regulate a constant clamping level in circuits such as digital audio systems. It is an ideal choice for audio-video receivers and other low-voltage systems. The 1N5942P/TR8 employs a unique bi-polar architecture which can be used to control the conduction of current by a voltage applied to the base-emitter junction. The 1N5942P/TR8 offers excellent high-precision performance due to its high-current control and accurate temperature coefficient. The high-current control ensures that negligible base current is used in the conduction of current, which minimizes the total power consumption and offers superior accuracy of analogue systems. Additionally, the 1N5942P/TR8 is designed to operate over a wide temperature range and offers a wide range of on-state saturation voltages. The 1N5942P/TR8 works by allowing current to pass through the diode when it is forward-biased and by blocking current when it is reverse-biased. When the diode is connected in a circuit with an external voltage source, the voltage applied to the base-emitter junction causes the electrons in the base region to be repelled and the holes to be attracted towards the base-emitter junction. As the voltage increases, the current through the diode increases and a voltage across the diode quickly falls to a fixed voltage. At this point, the diode is said to have reached the breakdown voltage and is no longer able to block current. When a reverse voltage is applied, the electrons in the base region are attracted back to the base region, which again blocks the current from flowing. The 1N5942P/TR8 is an ideal choice for many clamped voltage applications as it provides superior performance compared to other types of diode, even when exposed to temperature extremes. The device is designed for high-reliability applications and robustness, making it an excellent choice for applications requiring a reliable and robust clamping solution. The 1N5942P/TR8 offers superior performance in accuracy and precision applications. The device can be used to accurately control the temperature coefficient of the conduction of current, as well as providing an accurate clamping voltage. Furthermore, the device features a low-power consumption and can be used to reduce power dissipation in circuits. As such, the 1N5942P/TR8 is an ideal choice for applications where accuracy and low-power are required. In conclusion, the 1N5942P/TR8 is a specialized type of diode designed for use in clamped voltage applications. The device offers superior performance in accuracy and precision applications, as well as providing an accurately controlled clamping level. The device is robust and highly reliable and offers low-power operation.

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