Allicdata Part #: | 1N6002B_T50R-ND |
Manufacturer Part#: |
1N6002B_T50R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 12V 500MW DO35 |
More Detail: | Zener Diode 12V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N6002B_T50R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 22 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N6002 |
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The 1N6002B_T50R is an ultra low power consumption, high precision, low dropout voltage regulator diode. It has a wide application field and its working principle is similar to that of a Zener diode
The 1N6002B_T50R is used in voltage regulator, low dropout voltage regulator, voltage converter and low voltage application in general. It is suitable for use in high temperature and low temperature environment. Its small size allows it to be used in devices with limited space.
The 1N6002B_T50R is made of a voltage-sensitive layer and an InP active region. When the voltage across the diode exceeds a specified level, the diode turns on, allowing the voltage can be precisely regulated. This diode can withstand high voltage, so it can be used in systems with high power dissipation. It has very low power consumption compared to other similar diodes. It is also Heat resistant and Mo Radiation resistant.
The basic working principle of the 1N6002B_T50R is similar to that of a Zener diode. When the voltage is higher than the Zener voltage, the diode turns on allowing current to flow through the diode. This is known as the breakdown voltage. The 1N6002B_T50R has an ultra low power consumption which ensures that it can be used in applications requiring low voltage and higher power supply.
The breakdown voltage of the 1N6002B_T50R is very tight, which allows for high precision control of the output voltage. The temperature coefficient is low and the reverse leakage current is also low, which increases the overall reliability of the device. The diode also has internal short circuit protection which helps to protect it from inadvertent damage.
The 1N6002B_T50R has a wide application field and its working principle is similar to that of a Zener diode. It is suitable for use in high temperature and low temperature environments, and its small size allows it to be used in devices with limited space. It has an ultra low power consumption and breakdown voltage, and its temperature coefficient is low which increases the overall reliability of the device. Overall, the 1N6002B_T50R is an ideal diode for voltage regulation applications.
The specific data is subject to PDF, and the above content is for reference
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