| Allicdata Part #: | 1N6005B_T50R-ND |
| Manufacturer Part#: |
1N6005B_T50R |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ZENER 16V 500MW DO35 |
| More Detail: | Zener Diode 16V 500mW ±5% Through Hole DO-35 |
| DataSheet: |  1N6005B_T50R Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Voltage - Zener (Nom) (Vz): | 16V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 36 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 12V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -65°C ~ 200°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
| Base Part Number: | 1N6005 |
Description
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The 1N6005B_T50R is a Zener single diode specially designed for a variety of applications requiring precision voltage regulation. This diode can be used for a wide range of voltage regulation, ripple rejection and noise reduction in digital and analog circuits. The device is particularly suitable for applications where an operating temperature range of -65°C to +125°C is required. It is available in a SOD-123 package, making it suitable for most surface mount designs. The 1N6005B_T50R is a Zener single diode optimized with a P-Zone process. This process creates a precise, uniform doping profile across the entire wafer, allowing enhanced electrical performances as well as better engineering capabilities. This precise doping profile helps provide excellent temperature coefficient characteristics, increases unilateral gain coefficient and reduces shot noise. The 1N6005B_T50R has a reverse breakdown voltage of 5V, a storage temperature range of -65°C to +175°C and a maximum reverse power dissipation of 400 mW. It can also operate up to +125°C junction temperature. The device has a maximum forward voltage of 0.55V at 100mA and a total capacitance of 4pF.The device is made from 3 layers of semiconductor material. The first layer is the P-Layer which is used to define the doping profile of the diode and create a uniform doping layer between the layers. The second layer is the N-Layer that functions as the cathode for the diode. Finally, the third layer is the S-Layer which acts as the anode of the diode. This three layer configuration helps the diode to operate in a wide temperature range while allowing for extreme accuracy in the reverse power measurements. The 1N6005B_T50R is used in a wide variety of regulating, circuit protection and noise reduction applications. Its low reverse leakage current makes it suitable for use as a Zener reference in AC/DC circuits. It is used in circuit protection and surge suppression applications such as line-protection circuits and automotive sensors. It is also used in voltage regulator circuits, current limiting circuits and frequency detectors. In conclusion, the 1N6005B_T50R is a Zener single diode used for a variety of applications. Its precision voltage regulation, high temperature range and low reverse leakage current make it suitable for a variety of applications including circuit protection, noise reduction and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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