Allicdata Part #: | 1N6007B_T50A-ND |
Manufacturer Part#: |
1N6007B_T50A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 20V 500MW DO35 |
More Detail: | Zener Diode 20V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N6007B_T50A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 48 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 15V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N6007 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are essential components in modern electronics and used for many purpose such as rectification, voltage regulation and signal modulation. Zener diodes are used for providing a well known level of reverse breakdown voltage. 1N6007B_T50A is a type of Zener diode and it has a wide range of applications in modern electronics.
The 1N6007B_T50A Zener diode is a single component designed for application up to a 50V breakdown voltage. The device is based on an NPN planar technology by using a silicon epitaxail material. The diode has a high power rating of 3/4W allowing for a wider range of voltage range applications. It also has a high breakdown voltage of 50V with a current limit of 5mA when reverse biased.
The 1N6007B_T50A is widely used in applications such as voltage regulation, voltage references, lighting, power regulation, switching power supplies, and audio amplifiers. This diode is also used in radio frequency transmission systems. In radio frequency transmission systems, the diode helps to regulate the voltage levels in the circuit by dissipating the RF energy. This helps to eliminate voltage spikes that could cause interference or instability in the system.
The working principle of 1N6007B_T50A is based on the same principle that applies to most other Zener diodes: When it is subjected to a reverse bias voltage that exceeds its breakdown voltage, it allows a small current to flow through it. When the voltage exceeds the breakdown voltage, the current increases exponentially and the diode creates a voltage drop that depends on the current passing through the diode. The voltage drop across the diode is not only dependent on the amplitude of the current, but also on its frequency. This means that the voltage drop across the diode varies with changes in the current passing through it.
In terms of its construction, the 1N6007B_T50A Zener diode consists of a combination of two components: an electrolytic capacitor and a Zener diode. The Zener diode is responsible for providing the breakdown voltage and providing the desired voltage drop. The capacitor is used to connect the diode to the circuit and to provide a relatively stable current that is not affected by changes in the amplitude of the current passing through it. This ensures that a constant voltage drop is maintained while providing better regulation of the circuit\'s voltage.
In conclusion, the 1N6007B_T50A Zener diode is a single component designed for application up to a 50V breakdown voltage. It has a wide range of application such as voltage regulation, voltage references, lighting, power regulation, switching power supplies, and audio amplifiers. The working principle is based on the same principle that applies to most other Zener diodes. It consists of a combination of two components: an electrolytic capacitor and a Zener diode. Whatever the application, the 1N6007B_T50A Zener diode can provide reliable performance and regulation.
The specific data is subject to PDF, and the above content is for reference
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