Allicdata Part #: | 1N6008B_T50R-ND |
Manufacturer Part#: |
1N6008B_T50R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 22V 500MW DO35 |
More Detail: | Zener Diode 22V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N6008B_T50R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 55 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 17V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N6008 |
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Diodes are electrical components that allow electricity to flow in one direction. Zener diodes are a subset of diodes that, under a specified reverse voltage, allow a small current to flow in the reverse direction. A single Zener diode, such as the 1N6008B_T50R device, can be used to condition and regulate the flow of electrical current in a variety of applications.
The 1N6008B_T50R is a high-speed, low-saturation voltage, Zener diode suitable for use in many different systems where effective regulation is required. It has a breakdown voltage from 1.2V to 200V and can operate at temperatures of up to 150°C with a storage temperature range from -55°C to 150°C. It has an average forward current rating of 30mA and an average reverse leakage current of 1µA. It also has an average power dissipation of 850mW and an operating frequency of up to 10kHz.
The 1N6008B_T50R is a highly versatile and reliable Zener device, and its range of applications is broad. Among other uses, it can be utilised in voltage reference circuits, current limiting circuits, waveform clamping, voltage clamping, voltage shifting, overvoltage protection, and AC or DC waveform sampling. The diode can also be used in battery-powered and mobile electronics, as well as on motor drives and power supplies.
The operation of the 1N6008B_T50R relies on the Zener effect. The Zener effect is a phenomenon whereby electrical current is allowed to pass through a diode from its anode to its cathode in reverse bias, provided that its voltage is greater than a certain threshold. In other words, when the anode-to-cathode voltage of the diode reaches a certain level, known as the Zener Breakdown Voltage, the current flowing through the device increases exponentially. By adjusting the Zener voltage, current levels can be precisely regulated in the device.
Therefore, when it reaches its breakdown voltage, the current flowing through the 1N6008B_T50R will increase exponentially, allowing it to effectively regulate current levels in the application in which it is used. The device operates in a breakdown voltage range between 1.2V and 200V, allowing it to be suitable for a wide range of applications. Furthermore, the low reverse capacitance allows the device to be used in high-frequency applications up to 10kHz.
In conclusion, the 1N6008B_T50R is a single Zener diode suitable for use in a wide range of applications, from voltage reference circuits to waveform clamping. It offers high speed, low saturation voltage, and a breakdown voltage range of 1.2V to 200V making it a highly versatile and reliable device. The diode’s operation relies on the Zener effect, which allows the device to regulate current levels in the application in which it is used. As such, the 1N6008B_T50R is an invaluable tool for any type of system where effective regulation is required.
The specific data is subject to PDF, and the above content is for reference
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