Allicdata Part #: | 1N6012B-TPMSTR-ND |
Manufacturer Part#: |
1N6012B-TP |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N6012B-TP Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.02024 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 88 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 25V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 100mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N6012 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N6012B-TP, a single Zener diode, is a popular choice for rectifying and clamping in many different applications. Its high reverse breakdown voltage and low forward voltage drop make it an ideal diode for many types of circuits. From voltage regulation and signal conditioning to protection and RF rectification, the 1N6012B-TP is the perfect solution for many applications.
The 1N6012B-TP is capable of operating within a reverse breakdown voltage range of 6V-12V and a forward voltage drop of less than 0.8V at 50mA. It has a peak power dissipation of 500mW and is rated to be used in temperatures ranging from -55°C to +150°C. It has a simple 3-pin TO-92 package for easy assembly into existing PCBs and is RoHS compliant.
The 1N6012B-TP works on a simple principle. When forward biased, it allows current to flow through, but when reverse biased, it blocks current from passing through. When subjected to a reverse voltage, the internal capacitance of the diode begins to charge, allowing current to pass through. When the voltage reaches the rated breakdown voltage, the current flow across the junction increases rapidly and exceeds the reverse bias current. This phenomenon is known as Zener breakdown and is the basic principle of operation for all Zener diodes.
The 1N6012B-TP is commonly used in a wide variety of applications, including voltage regulation, signal conditioning, surge suppression, protection, ESD protection, and RF rectification. In voltage regulation, the diode is connected in series with a load and the voltage across the load is maintained at the Zener breakdown voltage, regardless of changes in the source voltage. In signal conditioning applications, the diode can be used to provide signals with well-defined levels by clamping transients and suppressing noise. Furthermore, the 1N6012B-TP is also used in surge suppression and protection applications, where it is used as a protective element to limit the voltage across a device in the event of a surge. Finally, the diode is capable of providing ESD protection and RF rectification, allowing for the conversion of RF signals to DC for use in various circuits.
The 1N6012B-TP, with its high-voltage reverse breakdown, low forward voltage drop, and versatile application potential, is an essential part of any circuit design. Its simple 3-pin TO-92 package and wide temperature range make it ideal for easy assembly into existing PCBs and its RoHS compliance ensures that it is safe and environmentally friendly. With so many applications and uses, the 1N6012BPB-TP is an invaluable piece in any designer\'s toolbox.
The specific data is subject to PDF, and the above content is for reference
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