1N6016B

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	47V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	170 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 36V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

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Overview of 1N6016B

The 1N6016B is a silicon semiconductor junction device commonly referred to as a Zener diode with a single Zener barrier. Zener diodes are widely used for voltage regulation in a wide range of applications. They offer higher efficiency than other adjustable regular devices such as zener shunts, and are considered to be very reliable. The 1N6016B specifically is designed to handle very low current while providing effective regulation over a wide range of environmental conditions.

Applications of 1N6016B

The 1N6016B is commonly used in circuit boards, battery chargers, and in many other circuits. By connecting the Zener diode in reverse bias, it is able to essentially regulate the voltage level in the circuit. This means that a constant and stable voltage output can be achieved regardless of voltage changes or fluctuations within the input. The 1N6016B is a good choice for applications needing stable, low current power regulation. It is also ideal for use in AC and DC circuits in battery chargers, radio transceiver applications and other low-level power electronics. The 1N6016B can also be used in linear applications as part of a voltage-limiting system. Due to its reverse-bias capacity, it can effectively limit the voltage up to its Zener breakdown voltage and ensure the output remains relatively stable at a certain voltage level. This type of application finds use in automotive, test equipment, and also digital signal processing circuits.

Working Principle of 1N6016B

The 1N6016B is a reverse-biased diode that works on the principle of Zener breakdown. This means that when a predetermined reverse voltage is reached, the depletion layer of the diode breaks and creates a conduction path for current. This process allows for a regulated output voltage regardless of fluctuations in the input. The 1N6016B is rated for a Zener voltage of 5.1 Volts and uses a fixed voltage level, meaning it is not adjustable. This can be beneficial as it enables component stability over a wide range of environmental conditions and sources. The 1N6016B is specified with a maximum device power dissipation of 0.06 watts. The maximum DC reverse current at 5.1 volts is 3.2mA, and the package size is small enough to fit in narrow PCB layouts. The 1N6016B is also protected against electrostatic discharge; it is rated to withstand as much as 8,000 Volts at 500 µA and to guard against breakdown or arc damage due to overvoltage transients. When used in a properly designed circuit, the 1N6016B is considered to be a highly reliable component that is able to meet the requirements of many applications in commercial and industrial applications.

Conclusion

The 1N6016B is an ideal single Zener diode for low power, stable applications such as linear regulation, radio transceivers, battery chargers, and so on. It functions on the principle of reverse-bias current, allowing for a regulated voltage output regardless of fluctuations in the input. It offers a range of benefits, from its small size, to its Enhanced Electro Static Discharge tolerance and its maximum power dissipation of 0.06 watts. The 1N6016B achieves excellent performance both in commercial and industrial settings, and is a very reliable component.

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