| Allicdata Part #: | 1N6038MS-ND |
| Manufacturer Part#: |
1N6038 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 7V 13.8V DO13 |
| More Detail: | N/A |
| DataSheet: | 1N6038 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Voltage - Clamping (Max) @ Ipp: | 13.8V |
| Supplier Device Package: | DO-13 |
| Package / Case: | DO-13 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 109A |
| Series: | -- |
| Voltage - Breakdown (Min): | 8.19V |
| Voltage - Reverse Standoff (Typ): | 7V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes (Transient Voltage Suppression Diodes) are dynamic components used to protect circuitry from overvoltage transients, such as those caused by electrostatic discharge (ESD), lightning, and inductive switching. They can effectively limit the voltage by clamping it to a safe level, thus protecting the circuit from the transient or surge voltage. The 1N6038 is an example of a transient voltage suppression diode, which is a bi-directional device.
The application fields of the 1N6038 include ESD protection, switching protection, overvoltage protection, and current-limiting protection. It can be utilized in a variety of circuits, ranging from those with low-power to high-power, general-purpose, and specialized applications. It is commonly used in communication systems, industrial control systems, consumer electronics, and automotive electronics.
The 1N6038\'s primary feature is its ability to absorb very high levels of energy in short spikes. This is made possible by tuning the breakdown voltage of the diode while maximizing the clamping voltage, thus reducing the voltage surges. It is available with a wide variety of configurations, such as peak power values, uniform temparature coefficients (U.T.C), and reverse leakage current. It also has fast response times, enabling it to protect circuitry from voltage transients in milliseconds.
The 1N6038 diode operates on the principle of avalanche breakdown. This occurs when the diode\'s reverse junction voltage increases to a point where the electric field strength is too great for the junction to withstand. This causes electrons to accelerate and create avalanches of electron collisions, releasing energy in the form of heat. The diode then quickly turns on and absorbs the energy of the transient.
To ensure the 1N6038 functions reliably over a wide range of conditions, its electrical characteristics needs to be verified. This includes testing for its breakdown voltage, dynamic impedance, clamping voltage, peak pulse power, and leakage current rating. A wide variety of test equipment is available to help characterize the diode\'s performance under varying scenarios.
One of the primary advantages of the 1N6038 is its ability to provide robust and reliable protection against voltage transients that are too fast or too high to be managed by other types of ESD protection devices. Furthermore, its reliable performance over a wide operating temperature range makes it suitable for use in a variety of applications. The 1N6038 is also available in a wide variety of packages and a variety of current ratings, allowing it to be used in both low- and high-power applications.
In conclusion, the 1N6038 is a versatile and reliable transient voltage suppression diode that can be used in a wide variety of applications. It can be tuned to provide reliable protection against voltage transients over a wide range of conditions and scenarios, and its electrical characteristics can be verified using a variety of testing equipment. Furthermore, its ability to absorb very high levels of energy and its reliability over a wide temperature range make the 1N6038 a popular choice for protecting circuitry from transient voltages.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N6046A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 17V 27.7V DO13 |
| 1N6007B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 20V 500MW DO3... |
| 1N6013B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE ZENER 36V 500MW DO3... |
| 1N6039A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 8.5V 14.5V DO13 |
| 1N6049 | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 21V 39.1V DO13 |
| 1N6043A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 12V 21.2V DO13 |
| 1N6002D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 12V 500MW DO3... |
| 1N6026D | Microsemi Co... | 5.01 $ | 1000 | DIODE ZENER 120V 500MW DO... |
| 1N6017B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
| 1N6038 | Microsemi Co... | -- | 1000 | TVS DIODE 7V 13.8V DO13 |
| 1N6057A | Microsemi Co... | -- | 1000 | TVS DIODE 47V 77V DO13 |
| 1N6000D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
| 1N6006D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
| 1N6012B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 33V 500MW DO3... |
| 1N6006A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
| 1N6017A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
| 1N6028A | Microsemi Co... | 1.86 $ | 1000 | DIODE ZENER 150V 500MW DO... |
| 1N6030A | Microsemi Co... | 1.86 $ | 1000 | DIODE ZENER 180V 500MW DO... |
| 1N6025C | Microsemi Co... | 4.05 $ | 1000 | DIODE ZENER 110V 500MW DO... |
| 1N6076 | Semtech Corp... | 4.0 $ | 1000 | DIODE GEN PURP 50V 6A AXI... |
| 1N6098 | GeneSiC Semi... | -- | 103 | DIODE SCHOTTKY 40V 50A DO... |
| 1N6022C | Microsemi Co... | 3.32 $ | 1000 | DIODE ZENER 82V 500MW DO3... |
| 1N6044A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 13V 22.5V DO13 |
| C0603C-1N60J1T2 | API Delevan ... | 0.76 $ | 1000 | FIXED IND 1.6NH 1A 60 MOH... |
| 1N6006B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
| 1N6015UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
| 1N6021UR | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
| 1N6036A | Microsemi Co... | -- | 60 | TVS DIODE 6V 11.3V DO13 |
| 1N6042 | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 10V 19V DO13 |
| 1N6055 | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 38V 67.8V DO13 |
| 1N6001A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
| 1N6022A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 82V 500MW DO3... |
| 1N6000C | Microsemi Co... | 3.32 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
| 1N6080 | Microsemi Co... | 31.6 $ | 93 | DIODE GEN PURP 100V 2A AX... |
| C0603C-1N60J1T1 | API Delevan ... | 0.76 $ | 1000 | FIXED IND 1.6NH 1A 60 MOH... |
| 1N6029B | Microsemi Co... | 2.0 $ | 1000 | DIODE ZENER 160V 500MW DO... |
| 1N6021D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 75V 500MW DO3... |
| 1N6001B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
| 1N6012B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 33V 500MW DO3... |
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1N6038 Datasheet/PDF