1N6017D

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	51V
Tolerance:	±1%
Power - Max:	500mW
Impedance (Max) (Zzt):	180 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 39V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

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The 1N6017D diode is a discrete zener diode that falls into Category Zener - Single. It is most commonly used in voltage regulation circuits due to its low leakage current. The 1N6017D is used in many applications, including automated systems, electronic equipment, power supplies, and electronic test equipment.The 1N6017D is a type of semiconductor device that has a heavily doped p-n junction. It is typically constructed on a single piece of semiconductor material, and its normal direction of operation is with the anode (positive)connected to the p-type material, and the cathode (negative)connected to the n-type material. The normal direction of operation is the reverse of the forward direction of operation for the diode. This means that in the normal direction of operation, the diode exhibits a breakdown voltage, which is the voltage at which the diode starts to conduct significant current.The 1N6017D is a highly efficient diode, and it is constructed to be able to switch on and off quickly. This allows the diode to be used in applications that require high speed operation, such as radio frequency applications. Additionally, the 1N6017D is designed to be able to withstand high temperatures and operate efficiently even in extreme environmental conditions.The 1N6017D has an operating temperature range of -65°C to +175°C, and it is designed to have a very low reverse leakage current. This low reverse leakage current means that even at high voltage drop, the diode will still retain its low leakage current. Furthermore, the 1N6017D is designed to have a low forward voltage, which means it can safely be used in applications with low supplies of energy, such as battery operated devices.The 1N6017D is ideal for applications that require the regulation of voltage. The 1N6017D can be used in voltage regulation circuits to prevent over-voltage, or it can be used in voltage clamping circuits to prevent a voltage from exceeding a certain level. Furthermore, the 1N6017D can also be used in power supplies to regulate the current.The 1N6017D is also well-suited for use as a voltage regulator in pulsed applications, such as RF and precision systems. The junction of the 1N6017D is designed to be able to handle higher voltage and power in pulsed applications due to its low reverse leakage current and high speed operation.The 1N6017D is a reliable, efficient and versatile diode, and it is suitable for a variety of applications. It is designed to be able to operate efficiently even in extreme environmental conditions, and it is highly efficient at regulating voltage and current. Its low reverse leakage current also makes it very suitable for use in pulsed applications, and it is ideal for use in power supplies, automated systems, electronic equipment and electronic test equipment.

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