| Allicdata Part #: | 1N6019B-ND |
| Manufacturer Part#: |
1N6019B |
| Price: | $ 1.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 62V 500MW DO35 |
| More Detail: | Zener Diode 62V 500mW ±5% Through Hole DO-35 |
| DataSheet: |  1N6019B Datasheet/PDF |
| Quantity: | 1000 |
| 455 +: | $ 1.34615 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 62V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 225 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 47V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
Description
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1N6019B is a Zener diode manufactured with single element. This diode is designed to operate at high current, with high breakdown voltage. It is mostly used in applications such as voltage regulation, voltage boosting, voltage protection, ESD/surge protection, voltage scaling, voltage clamping and power limiting.The 1N6019B Diode is based on the PN junction and works on the principle of voltage breakdown. It increases the number of electrons that can move through the PN junction by increasing the electrical field. This increases the current passing through the junction, which in turn generates heat. The increased current passing through the diode results in a decrease in voltage across the diode.The 1N6019B Diode is a high power device that can handle power up to 2.5 watts continuously. It can also provide a large breakdown voltage rating, typically ranging from 1 Volt (V) up to 200 Volts. Depending on the application, different devices with different breakdown voltages can be chosen.The 1N6019B Diode has a peak reverse voltage of 200 volts, and a maximum reverse current of 10 milliamperes (mA). It has an operating temperature range between -55 to +125 degrees Celsius (C) and a storage temperature range of -55 to +150 degrees C. The diode has a junction capacitance of 0.001pF and a junction-to-case capacitance of 0.00075 pF, with a total capacitance of 0.00175.In applications such as power limiting, the 1N6019B Diode provides a safe and efficient way to limit the amount of current passing through the system and protect it from further damage. When used in voltage regulation, the diode can provide a constant voltage output regardless of the fluctuations in the voltage supply. It can also be used in electrostatic discharge (ESD) protection systems, to protect sensitive components from ESD surges.The 1N6019B Diode has several advantages such as high power rating, low forward voltage drop, easy to mount, low junction capacitance, and fast switching times. In addition, the diode has an ultra-thin profile, making it ideal for use in applications where space is limited.To ensure a reliable operation and performance of the 1N6019B Diode, it is important to choose the device with the appropriate breakdown voltage according to the application. Conducting a proper check of the device, such as performing a resistance test, will also help ensure the safe and optimum operation of the device.
The specific data is subject to PDF, and the above content is for reference
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