| Allicdata Part #: | 1N6026A-ND |
| Manufacturer Part#: |
1N6026A |
| Price: | $ 1.86 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 120V 500MW DO35 |
| More Detail: | Zener Diode 120V 500mW ±10% Through Hole DO-35 |
| DataSheet: | 1N6026A Datasheet/PDF |
| Quantity: | 1000 |
| 365 +: | $ 1.67658 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 120V |
| Tolerance: | ±10% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 1250 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 76V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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Diodes - Zener - Single
1N6026A is a single Zener diode with a higher breakdown voltage of the bidirectional multi-functional devices. This type of diode is mostly suitable for voltage regulation application. 1N6026A is rated for a maximum reverse power dissipation of 500 mW and 0.5 ampere continuous forward current.
The working principle of 1N6026A is based on the PN junction theory. The PN junction is a barrier-type junction, which is formed by using semiconductor materials with different concentrations and dopants. The two materials form an active junction, which is used to create the structure of the diode. The PN-junction promotes the flow of current through it, but the reverse current can\'t pass through it. This is because of the "built-in" electric field developed at the junction due to the flow of majority carriers.
1N6026A Zener diode can be used in circuits for regulating voltages or for generating square wave oscillations. They are used for protecting the circuits from reverse surge and EMI (electromagnetic interference). Its application includes voltage stabilizers, power supplies, and protection circuits. They are also commonly used in consumer electronic devices such as mobile phones and televisions.
1N6026A Zener diode is constructed with a basic PN junction, which behaves similarly to a normal diode. However, the voltages at which the PN junction breaks down are highly dependent on the doping of the two materials, which in turn regulates the breakdown voltage of the diode. The 1N6026A diode has a breakdown voltage of 15 V, which is ideal for many voltage regulation applications.
When a reverse voltage is applied to the diode, the electric field across the PN junction will be increased. This causes electrons from the n-type material to move to the p-type material and holes from the p-type material to move towards the n-type material. As the electric field increases, more electrons and holes are pushed across the junction, which in turn results in a current flow across the diode. The current flowing through the diode is proportional to the applied voltage and it masks the reverse voltage. Therefore, the voltage across the diode when in forward bias will be around the Zener voltage.
In summary, 1N6026A is a single Zener diode ideally suited for voltage regulation applications. It has a breakdown voltage of 15 V, which ensures a smooth and stable operation. The basic working principle of the diode is based on the PN junction and its reverse voltage affects the flow of current through the diode while allowing it to regulate voltages.
The specific data is subject to PDF, and the above content is for reference
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1N6026A Datasheet/PDF