1N6027B Allicdata Electronics
Allicdata Part #:

1N6027B-ND

Manufacturer Part#:

1N6027B

Price: $ 2.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 130V 500MW DO35
More Detail: Zener Diode 130V 500mW ±5% Through Hole DO-35
DataSheet: 1N6027B datasheet1N6027B Datasheet/PDF
Quantity: 1000
341 +: $ 1.79895
Stock 1000Can Ship Immediately
$ 2
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 950 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 99V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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.

The 1N6027B is a type of single Zener diode whose main function is to establish and maintain a certain level of voltage across its terminals. A diode is an electronic device composed of a semiconductor that only allows current to flow in one direction. Zener diodes are a type of diode that is specifically designed to operate in reverse bias, meaning that current passes through the device in a direction opposite to its normal forward bias. The 1N6027B is designed to regulate the voltage level across its terminals when the diode is in reverse bias. This feature makes the 1N6027B an ideal choice for applications such as voltage regulation, voltage reference, voltage limiters, and voltage stabilization.

The 1N6027B is constructed using silicon and has a maximum reverse voltage rating of 20 volts. This diode features a slightly different construction than a standard diode due to its reverse biased operation. The 1N6027B is composed of a heavily doped P-type layer and a lightly doped N-type layer, separated by a thin layer of lightly doped P-type material. This allows current to flow from the heavily doped P-type layer to the lightly doped N-type layer when the diode is reverse biased, and current can be limited in the other direction when the diode is in forward bias.

The working principle of the 1N6027B can be explained by examining the P-N junction which forms the basis of operation for any diode. When a voltage is applied across the P-N junction, the diode will conduct current depending on the direction of the applied voltage. If the voltage is in the same direction as the P-N junction, then the current passes through the diode without any issues, this is known as forward bias. On the other hand, if the voltage is in the opposite direction then the diode will resist current in the forward direction, but will allow current to pass if the applied voltage is high enough, this is known as reverse bias.

The 1N6027B is unique in that it has a special design which allows it to regulate the voltage level when it is operating in reverse bias. This feature makes this particular diode an ideal choice for circuits requiring precise voltage control such as voltage regulators, voltage limiters and voltage stabilizers. The key to this precise voltage regulation is the heavily doped P-type layers in the 1N6027B. These layers allow current to pass in the reverse and the forward direction, however the forward current is limited to the voltage rating of the diode. This feature makes the 1N6027B invaluable for applications requiring precise control over voltage levels.

The 1N6027B is an ideal choice for a wide variety of applications requiring precise voltage control due to its unique design which allows for precise voltage regulation. Moreover, its reverse voltage rating of 20 volts makes it an attractive option in a wide variety of circuits. The 1N6027B is a must have for anyone looking for precise voltage control in their circuits.

The specific data is subject to PDF, and the above content is for reference

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