
Allicdata Part #: | 1N6058AMS-ND |
Manufacturer Part#: |
1N6058A |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 53V 85V DO13 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Voltage - Clamping (Max) @ Ipp: | 85V |
Supplier Device Package: | DO-13 |
Package / Case: | DO-13 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 17.7A |
Series: | -- |
Voltage - Breakdown (Min): | 58.9V |
Voltage - Reverse Standoff (Typ): | 53V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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1N6058A diodes belong to Transient Voltage Suppressive diodes (TVS), a class of devices used in applications such as suppressing voltage spikes related to electrostatic discharge (ESD), inductive switching, and lightning strikes. TVS diodes prevent voltage spikes from interfering with electronic devices, providing a low-impedance conductive path for transient current.
The 1N6058A diode is especially suitable for applications subject to high voltage transients such as switching transients, ESD, and inductive switching. It has a low junction-capacitance of approximately 25 pF and a fast response time of 10 ns. The device is designed for suppression of voltage transients up to working voltages ranging between 5 volts (5V) and 550 volts (550V). It is designed to provide protection over a very wide frequency range, from DC up to 1 GHz.
The 1N6058A diode is essentially a voltage rectifier and is composed of two parts; an anode (positive terminal) and a cathode (negative terminal). When the anode is brought above the cathode by an external voltage, a small current flows through the diode, allowing it to function as a voltage regulator. The diode is activated once its forward voltage drops below the breakdown voltage. The breakdown voltage is set according to the device’s specification and is typically in the range of 5V to 550V.
In addition to its voltage rectifier design, the 1N6058A diode also has a zener voltage breakdown mechanism. When the external voltage rises to a predetermined value, the junction between the anode and cathode will become electrically rectified and the diode will be forced into conduction as if the external voltage were constantly applied. The diode then acts as a zener-and prevents the voltage passing through the diode from exceeding the zener breakdown voltage. This ensures that the voltage spike does not cause any damage to the electronic device connected to the diode.
The 1N6058A diode also has built-in protection against reverse current flow and power surges by using an internal diode connected in parallel with the 1N6058A diode. This internal diode has a maximum current rating that is higher than the maximum current rating of the 1N6058A diode thus preventing reverse current from damaging the device. Furthermore, the 1N6058A diode also has a low capacitance rating, meaning that it does not require additional components to prevent power surges or transients.
In summary, 1N6058A diodes are effective as transient voltage suppressors (TVS) for suppressing voltage spikes caused by electrostatic discharge, inductive switching, and lightning strikes, as well as for protecting electronic devices from voltage transients up to 550V. The device is suitable for high speed applications up to 1GHz and its small size and low capacitance make it ideal for use in tight spaces. Additionally, the device is equipped with internal protection features to prevent reverse current flow and power surges.
The specific data is subject to PDF, and the above content is for reference
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