| Allicdata Part #: | 1N6068MS-ND |
| Manufacturer Part#: |
1N6068 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 137V 258V DO13 |
| More Detail: | N/A |
| DataSheet: | 1N6068 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Voltage - Clamping (Max) @ Ipp: | 258V |
| Supplier Device Package: | DO-13 |
| Package / Case: | DO-13 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 5.8A |
| Series: | -- |
| Voltage - Breakdown (Min): | 153V |
| Voltage - Reverse Standoff (Typ): | 137V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS devices, also called transil or transorb, are electronic components designed to protect other components from electrical overstress, usually arising from transient voltage stresses such as electrostatic discharge (ESD). The 1N6068 is a specific type of diode, also known as a Transient Voltage Suppressor. A diode is an electronic component that allows electricity to flow easily in one direction in a circuit, but not in the other. It is a basic building block for electronics. The 1N6068 is designed to provide protection against high voltage transients.
The 1N6068 is a Silicon-Carbide (SiC) Transient Voltage Suppressor (TVS) diode. This type of protection device uses the PN junction of a diode to suppress overvoltage transients or surges. It is designed to protect other components such as integrated circuits, microprocessors, transistors, and other sensitive electronic components. The protection is provided by the TVS diode which is connected to the circuit in parallel. The current will be diverted by the TVS diode whenever a voltage transient is detected. This prevents the voltage transient from damaging the components in the circuit. The 1N6068 is designed for use in low voltage applications, with a typical breakdown voltage of 6.8 volts.
The 1N6068 is used in many applications where overvoltage protection is a key concern. It is commonly used in automotive and industrial electronics, including motor controllers, solenoids, and industrial process controllers. It can also be found in automotive engine control systems, power equipment, and other applications where high-voltage transients can occur. This type of device is also used in computers and electronics devices for overvoltage protection.
The working principle of the 1N6068 is based on a PN junction. A PN junction is a type of electrical junction formed between semiconductor materials with different doping levels on either side of the junction. When a voltage is applied to the junction, it creates an electric field, which can either attract or repel charge carriers across the junction depending on the applied voltage. When the voltage exceeds a certain level, the electric field causes a large number of charge carriers to cross the junction, resulting in a current flow. This is known as a breakdown voltage.
The 1N6068 is designed to break down at a predetermined voltage, usually 6.8 volts. When the voltage applied to the junction exceeds this level, the electric field across the junction becomes strong enough to allow a large number of electrons to flow across the junction, resulting in a current flow. This current flow is diverted away from the circuit, thus providing protection from overvoltage transients.
The 1N6068 is a widely used form of Transient Voltage Suppressor diode that offers reliable protection against electrical overstress. This type of protection device is used in many different applications where high-voltage transients can occur. It is effective at breaking down at its pre-determined voltage and providing effective protection from damaging electrical transients.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N6046A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 17V 27.7V DO13 |
| 1N6007B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 20V 500MW DO3... |
| 1N6013B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE ZENER 36V 500MW DO3... |
| 1N6039A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 8.5V 14.5V DO13 |
| 1N6049 | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 21V 39.1V DO13 |
| 1N6043A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 12V 21.2V DO13 |
| 1N6002D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 12V 500MW DO3... |
| 1N6026D | Microsemi Co... | 5.01 $ | 1000 | DIODE ZENER 120V 500MW DO... |
| 1N6017B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
| 1N6038 | Microsemi Co... | -- | 1000 | TVS DIODE 7V 13.8V DO13 |
| 1N6057A | Microsemi Co... | -- | 1000 | TVS DIODE 47V 77V DO13 |
| 1N6000D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
| 1N6006D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
| 1N6012B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 33V 500MW DO3... |
| 1N6006A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
| 1N6017A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
| 1N6028A | Microsemi Co... | 1.86 $ | 1000 | DIODE ZENER 150V 500MW DO... |
| 1N6030A | Microsemi Co... | 1.86 $ | 1000 | DIODE ZENER 180V 500MW DO... |
| 1N6025C | Microsemi Co... | 4.05 $ | 1000 | DIODE ZENER 110V 500MW DO... |
| 1N6076 | Semtech Corp... | 4.0 $ | 1000 | DIODE GEN PURP 50V 6A AXI... |
| 1N6098 | GeneSiC Semi... | -- | 103 | DIODE SCHOTTKY 40V 50A DO... |
| 1N6022C | Microsemi Co... | 3.32 $ | 1000 | DIODE ZENER 82V 500MW DO3... |
| 1N6044A | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 13V 22.5V DO13 |
| C0603C-1N60J1T2 | API Delevan ... | 0.76 $ | 1000 | FIXED IND 1.6NH 1A 60 MOH... |
| 1N6006B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
| 1N6015UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
| 1N6021UR | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
| 1N6036A | Microsemi Co... | -- | 60 | TVS DIODE 6V 11.3V DO13 |
| 1N6042 | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 10V 19V DO13 |
| 1N6055 | Microsemi Co... | 14.43 $ | 1000 | TVS DIODE 38V 67.8V DO13 |
| 1N6001A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
| 1N6022A | Microsemi Co... | 1.43 $ | 1000 | DIODE ZENER 82V 500MW DO3... |
| 1N6000C | Microsemi Co... | 3.32 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
| 1N6080 | Microsemi Co... | 31.6 $ | 93 | DIODE GEN PURP 100V 2A AX... |
| C0603C-1N60J1T1 | API Delevan ... | 0.76 $ | 1000 | FIXED IND 1.6NH 1A 60 MOH... |
| 1N6029B | Microsemi Co... | 2.0 $ | 1000 | DIODE ZENER 160V 500MW DO... |
| 1N6021D | Microsemi Co... | 3.74 $ | 1000 | DIODE ZENER 75V 500MW DO3... |
| 1N6001B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
| 1N6012B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 33V 500MW DO3... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
1N6068 Datasheet/PDF