1N6276AHE3_A/D

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The 1N6276AHE3_A/D TVS diode is mission critical for protecting sensitive electronic components or circuits against electrical overstress. It has been designed to protect against electrostatic discharges (ESD) and lightning induced surges. The key features of this TVS diode include: high peak pulse power capability of 4.2kW (8/20μs); high reverse surge capability of 6.2A (10/1000μs) or 30A (8/20μs); and low leakage current when reverse biased or under no-reverse-biased operation. This TVS diode has a wide variety of applications, such as in: mobile phones, appliances, industrial equipment, automotive systems, and many more.

1N6276AHE3_A/D diodes have a number of advantages which make them suitable for different application fields. Firstly, they are designed to suppress transient pulses quickly, as they can be used for very high power pulses of up to 4.2kW. Furthermore, they have high surge capability which enables them to absorb very high reverse surge current. This is what makes the diode ideal for conductive-mode as well as inductive-mode application fields. Moreover, it has a low reverse leakage current, which allows it to remain in the forward-bias condition and maintain its protection characteristics. Additionally, the TVS diode is designed to stay in the off state while under no-reverse-biased operation, ensuring protection from overvoltage transients.

The working principle of 1N6276AHE3_A/D TVS diodes is fairly simple. The diode is designed such that, during an overstress condition, it will conduct in the forward direction, thereby limiting the overvoltage transient. This also allows the diode to protect the device or circuit from electrical overstress due to lightning or ESD. In general, the diode is designed to remain in the off-state and normal state of operation while under no-reverse-biased or reverse-biased operation. The diode can also be used as a transient suppressing device, as it provides protection against electrostatic discharges. Finally, it can also be used as an overvoltage protection device, as it can quickly limit overvoltage transients.

1N6276AHE3_A/D TVS diodes are becoming increasingly popular due to their ability to protect against electrical overstress. They are used in a range of different application fields, including mobile phones, appliances, industrial equipment, and automotive systems. They have a high peak pulse power capability of 4.2kW, a high reverse surge capability of 6.2A (10/1000μs) or 30A (8/20μs), and a low reverse leakage current. The diode is designed such that, during an overstress condition, it will conduct in the forward direction, thereby limiting the overvoltage transient and providing protection against electrical overstress due to lightning or ESD. Additionally, the diode is also suitable for conductive- and inductive-mode application fields. All in all, the 1N6276AHE3_A/D TVS diode is an excellent choice for protection against transient overvoltage, making it ideal for a range of uses.

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