1N6292HE3/73 Allicdata Electronics
Allicdata Part #:

1N6292HE3/73-ND

Manufacturer Part#:

1N6292HE3/73

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 60.7V 109V 1.5KE
More Detail: N/A
DataSheet: 1N6292HE3/73 datasheet1N6292HE3/73 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 109V
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 13.9A
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Breakdown (Min): 67.5V
Voltage - Reverse Standoff (Typ): 60.7V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Box (TB) 
Description

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Transient Voltage Suppressor Diodes (TVS) are electronic devices that protect vulnerable electronic circuits and components from high voltage overloads. The 1N6292HE3/73 is a special type of TVS diode, and is designed to protect against overvoltage and overcurrent surges. It is widely used in automotive, industrial, military, and telecom applications.

The 1N6292HE3/73 has many features that make it suitable for these applications. It has a low breakdown voltage of 5.5V, and it can withstand up to 250V in avalanche mode. It has a fast-acting response time of less than 10ns, and a high-peak surge rating of 1kA. It also has a low stand-off voltage rating of 5V, and it has a low power dissipation of 4W when in active mode. Furthermore, it has a low capacitance of 3.5pF, which makes it suitable for high-speed applications.

The working principle of the 1N6292HE3/73 is based on the principle of avalanche breakdown. The device has two electrodes, one connected to the power source and one to the ground, and is made up of semiconductor material such as silicon or germanium. When a voltage is applied across the electrodes, it will create an electric field in the semiconductor material. If the applied voltage is greater than the breakdown voltage of the device, the electric field will cause a large amount of electrons to be swept or “avalanched” through the device, creating a low resistance path between the two electrodes.

The purpose of the 1N6292HE3/73 is to shunt current, or divert it away from vulnerable components. It is designed to limit the voltage surge on sensitive components, and to protect them from being damaged by a high surge current. It works by clamping the voltage across the device when the voltage exceeds the breakdown voltage of the device. The 1N6292HE3/73 will also divert excess current away from sensitive components, preventing them from being damaged by overcurrent.

The 1N6292HE3/73 is an ideal device for protecting sensitive circuits from transient voltage and overcurrent surges. It is widely used in automotive, industrial, military, and telecom applications, and can be used to protect components from high peak-voltage transients and excessive current surges. Its fast-acting response and low capacitance make it suitable for high-speed applications, and its low stand-off voltage and power dissipation make it an energy-efficient choice.

The specific data is subject to PDF, and the above content is for reference

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