1N6279A-E3/51 Allicdata Electronics
Allicdata Part #:

1N6279A-E3/51-ND

Manufacturer Part#:

1N6279A-E3/51

Price: $ 0.41
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 18.8V 30.6V 1.5KE
More Detail: N/A
DataSheet: 1N6279A-E3/51 datasheet1N6279A-E3/51 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1500 +: $ 0.36425
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Voltage - Clamping (Max) @ Ipp: 30.6V
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 49A
Series: TransZorb®
Voltage - Breakdown (Min): 20.9V
Voltage - Reverse Standoff (Typ): 18.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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1N6279A-E3/51 TVS – Diodes Application Field and Working Principle

TVS diodes, also known as transient voltage suppression diodes, are used to protect electronic equipment from electrical over stresses, such as lightning strikes, electrostatic discharges (ESD), and inductive kick back. These diodes are designed to handle large, short-term electrical pulses in order to ensure the safety of electronic components and systems. The 1N6279A-E3/51 TVS diode is a bi-directional diode designed for high voltage protection in applications with voltages of up to 5,000 volts. The diode is ideal for Ethernet, communication, automotive, and power distribution applications in which high voltage spikes occur. The device features ultra-low capacitance forward protection and low reverse leakage. The 1N6279A-E3/51 utilizes a junction between a metal oxide and a semiconductor material, which acts as an electronic barrier. When a high voltage spike occurs, the steel oxide junction is quickly activated, leading to an avalanche breakdown, which is triggered by a reverse voltage spike over the breakdown voltage. This causes a short circuit between the anode and the cathode of the device. The 1N6279A-E3/51 also features dynamic resistance. This enables the diode to react quickly to a reverse voltage, while still offering high voltage protection. The device also has a positive temperature coefficient, which ensures that it remains stable over changes in ambient temperature. The 1N6279A-E3/51 is also designed to be reliable and efficient. The device is rated for up to 125W of power and an ESD protection of at least 8kV (HBM). In addition, the diode has a rapid response time of at least 0.5µs, which ensures that it will accurately and quickly respond to high-power spikes that occur in its operational environment. To sum up, the 1N6279A-E3/51 is a robust and reliable TVS-diode offering high voltage protection, dynamic resistance, low capacitance, and low reverse leakage. The device is well suited for Ethernet, communication, automotive, and power distribution applications, as it can protect against high voltage spikes in the range of up to 5,000 volts. It is rated for up to 125W of power and has a rapid response time to ensure accurate and timely protection from electrical over stresses.

The specific data is subject to PDF, and the above content is for reference

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