1N6281AHE3_A/C Allicdata Electronics

1N6281AHE3_A/C Circuit Protection

Allicdata Part #:

1N6281AHE3_A/C-ND

Manufacturer Part#:

1N6281AHE3_A/C

Price: $ 0.29
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 23.1V 37.5V 1.5KE
More Detail: N/A
DataSheet: 1N6281AHE3_A/C datasheet1N6281AHE3_A/C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1400 +: $ 0.26791
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Voltage - Clamping (Max) @ Ipp: 37.5V
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 40A
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Breakdown (Min): 25.7V
Voltage - Reverse Standoff (Typ): 23.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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1N6281AHE3_A/C is a TVS diode, also known as Transient Voltage Suppressor Diode, is designed for unprotected current-driven circuits, primarily to protect against transient overvoltage conditions. This type of diode plays an important role in keeping the voltage spikes that flow through the protected circuit in check, which can cause them to be damaged due to peak current flow or burn out as a result.In a TVS diode, reverse breakdown occurs when the voltage reaches a certain amount, which is called the avalanche breakdown voltage. The breakdown voltage is the diode’s switch point, meaning that once the voltage surpasses the breakdown voltage, the diode is triggered, and the diode conducts in a high current state.

1N6281AHE3_A/C diode’s application field includes: industrial control systems, medical equipment, consumer electronics, automobile electronics, digital instrumentation, communication equipment, electrical appliances, and computer systems. It is usually used to protect the power supply circuits, data lines, and other vulnerable circuits from damage due to inrush currents, electrostatic discharge, high voltage transients, and noises.

The working principle of the 1N6281AHE3_A/C is to use the diode’s reverse breakdown voltage to prevent the overload of the circuit. When the voltage or current exceeds the normal range, the reverse breakdown voltage and the resulting avalanche effect of the diode will kick in to reduce the current to a designated protection level. At this stage, the diode will become a short circuit and absorb the energy. The diode is also designed to produce an attenuated or dampened wave shape to reduce ringing from the overvoltage or surge.

The 1N6281AHE3_A/C has a breakdown voltage of 40V and a sustained current of 8A. It is also RoHS Compliant. Its benefits include: fast response, minimal differential voltage between “on” and “off” states, low capacitance, low power dissipation, and easy to install on user\'s printed circuit boards. Additionally, it is able to handle a wide range of operating temperatures, from -55°C to 125°C, allowing it to be used in a wide variety of applications, even in harsh environments.

The 1N6281AHE3_A/C allows electronic components to operate in an environment of high voltages or high transients generated by external sources, such as power surges, lightning strikes, and ESD’s. It works in order to absorb all the energy that exceeds the specified limits, protecting the vulnerable components of the circuit and providing reliable service.

The specific data is subject to PDF, and the above content is for reference

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