Allicdata Part #: | 1N6764R-ND |
Manufacturer Part#: |
1N6764R |
Price: | $ 106.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RECTIFIER DIODE |
More Detail: | Diode |
DataSheet: | 1N6764R Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 96.04980 |
Series: | * |
Part Status: | Active |
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1N6764R is a high-power single rectifier diode, suitable for power supply, motor control and other fields. It has good switching characteristics and can work stably and reliably at majority voltage and power range. 1N6764R is made of high-purity silicon, with low leakage current and strong reverse voltage. Moreover, it has high reliability, low power loss and long-term stability in operation. Therefore, it is widely used in electronics, automotive, industrial and other fields.
1N6764R Application Field
1N6764R application field includes general rectifier power supply, inverter, solar photovoltaic, uninterruptible power supply, motor control, PFC, LED lighting and many other fields. It is also suitable for a variety of combined power, dynamic braking applications. In addition, it can also be used in electricity, communications, computers, digital products and other electronic equipment.
1N6764R Working Principle
1N6764R consists of PN junction, Schottky metal-semiconductor, P layer and other components. In the forward direction, when current passes through the PN junction, the band gap of the PN junction is narrowed and the electrons are injected into the N-layer, forming a potential barrier which prevents further conduction faults. In the reverse direction, the Schottky metal-semiconductor junction prevents current leakage. P layer prevents "sneak current" from flowing between the two leads of 1N6764R.
In addition, the unidirectional conduction of 1N6764R is related to the structure of the device itself. The structure of 1N6764R consists of an anode, a cathode and a PN junction with a low forward voltage drop of 0.7V. In the forward direction, when the anode voltage is greater than the cathode voltage and exceeds the forward voltage drop, it can begin the conduction, and electrons flow from the anode to the cathode to form a current loop. On the reverse direction, the PN junction formed on the surface will be reversely stressed, and the anode voltage is lower than the cathode voltage, so it will not cause conduction.
Conclusion
1N6764R is a high reliability and long life single rectifier diode, with stable performance and low power loss, which can be widely used in power supply, motor control, solar photovoltaic, uninterruptible power supply, LED lighting and other fields. Its working principle is mainly related to the PN junction and Schottky metal-semiconductor junction, which can effectively block current flow in the opposite direction and allow for the unidirectional flow of current.
The specific data is subject to PDF, and the above content is for reference
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