Allicdata Part #: | 1N712-ND |
Manufacturer Part#: |
1N712 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 8.2V 250MW DO35 |
More Detail: | Zener Diode 8.2V 250mW ±10% Through Hole DO-35 |
DataSheet: | 1N712 Datasheet/PDF |
Quantity: | 1000 |
491 +: | $ 1.24825 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±10% |
Power - Max: | 250mW |
Impedance (Max) (Zzt): | 6 Ohms |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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Classified as a type of diode, the 1N712 are a series of small signal Zener diodes that provide a wide range of voltage regulation. The 1N712 are primarily used in voltage regulation and noise suppression applications, but they can also be used in parallel with the resistors in order to reduce the risk of breakdown. The 1N712 diodes are ideal for use in low-cost and low-temperature environments.The 1N712 is a Zener diode, which is a type of diode that allows the flow of current in either direction but prevents a voltage greater than the breakdown voltage from being exceeded. When the voltage across the component is negative or zero, then the voltage will remain stable. When it goes beyond its breakdown voltage, it will effortlessly remain there until it reaches the maximum rated voltage. This phenomenon is referred to as Zener voltage regulation.
The working principle of the 1N712 is based on the avalanche breakdown determined by the width of the depletion layer across the diode. The avalanche breakdown is a process whereby the current flowing through a diode abruptly increases due to the multiplication of minority carriers. As a result of this multiplication, the depletion region of the diode becomes wider and causes a change in the electric field. This change in electric field causes the Zener breakdown and results in the formation of a junction barrier that holds back the current flowing through the diode within specified limits.In addition to its Zener breakdown characteristic, the 1N712 also has a reverse recovery characteristic, which allows it to shut off the current flowing through it in a very short time.
The 1N712 diode is designed to provide a wide range of voltage regulation between -0.5 and -20 V, with a maximum current of 500 mA. The 1N712 also has a maximum peak reverse power dissipation rating of 500 mW and a thermal resistance of 0.5 degrees C per mW. The capacitance of the 1N712 is also very low, ranging from 1.5 to 2 pF. The 1N712 diodes are typically housed in DO-35 packages.
The 1N712 can be used for a variety of applications such as voltage regulation, voltage dropping, and noise suppression in TV sets and audio amplifiers, as well as for reverse overvoltage protection. The 1N712 can also be used for temperature compensation of capacitors, transistors, and integrated circuits, and for setting reference voltages in light-emitting diode displays. These diodes can also be used in high temperature and high power applications with the use of heat sinks.
In conclusion, the 1N712 is a series of small signal Zener diodes that offer a wide range of voltage regulation. With their low capacitance and reverse recovery characteristics, the 1N712 are suitable for a variety of applications such as voltage regulation and noise suppression, temperature compensation, and reverse overvoltage protection.
The specific data is subject to PDF, and the above content is for reference
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