Allicdata Part #: | 1242-1119-ND |
Manufacturer Part#: |
1N8032-GA |
Price: | $ 133.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE SCHOTTKY 650V 2.5A TO257 |
More Detail: | Diode Silicon Carbide Schottky 650V 2.5A Through H... |
DataSheet: | 1N8032-GA Datasheet/PDF |
Quantity: | 4 |
1 +: | $ 121.31900 |
10 +: | $ 115.46000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 2.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 2.5A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 5µA @ 650V |
Capacitance @ Vr, F: | 274pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-257-3 |
Supplier Device Package: | TO-257 |
Operating Temperature - Junction: | -55°C ~ 250°C |
Base Part Number: | 1N8032 |
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A 1N8032-GA diode is a single rectifier device which is commonly used in a variety of applications. It is a three-terminal, planar-geometry, silicon-based rectifier, specifically designed for surge current capability.
The 1N8032-GA rectifier has an average forward current rating of 4.0A and a maximum forward current rating of 8.0A. It has a maximum reverse voltage rating of 80V, and a maximum surge current rating of 41A. It is also rated for operation at case temperatures up to 150 degrees Celsius.
The main application of the 1N8032-GA diode is in power supplies, particularly power supplies for consumer electronics and appliances. It is often used as a bridge rectifier, and can be used for rectification and other applications where high surge current capability is required.
In addition to its main application, the 1N8032-GA diode can also be used in automotive applications, for motor control, for rectification of AC to DC power conversion, and for other applications where reliable, surge-resistant rectification is required.
The working principle of the 1N8032-GA diode is based on a principle of reverse current blocking. The device is made of two parts: an anode and a cathode. When a reverse voltage is applied to the diode, the diode stops conducting. This is due to the fact that the holes created by the reverse voltage increase the width of the depletion zone, stopping current flow.
When a forward voltage is applied to the diode, the depletion zone shrinks, allowing current to flow through the diode. This is known as forward bias. As a result, the 1N8032-GA diode can be used to convert AC to DC voltage with a relatively high efficiency.
The 1N8032-GA diode is a reliable and effective rectifier device, and is widely used in a variety of industrial, consumer electronics, and automotive applications. Its stability, surge current capability, and temperature tolerance make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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