1N980B Allicdata Electronics
Allicdata Part #:

1N980B-ND

Manufacturer Part#:

1N980B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 62V 500MW DO7
More Detail: Zener Diode 62V 500mW ±5% Through Hole DO-7
DataSheet: 1N980B datasheet1N980B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 62V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 185 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 47.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Description

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A 1N980B diode is a dual-polarity Zener diode designed to provide an economical voltage reference in negative and/or positive applications. This popular device is basically a PN junction guarded by a dual layer of hindrance to prevent the voltage from exceeding about 6 Volts in either a forward bias or reverse bias direction.

Applications

The 1N980B diode is used to provide a reliable voltage source for industrial, automotive, and communications applications, such as battery backed-up systems, radio receivers, aviation, and others. It is also suitable for electrostatic discharge (ESD) protection for sensitive devices, or as a precision source for analog signal conditioning, measurement, or conversion.

Working Principle

In general, the 1N980B diode works by controlling the amount of current that is allowed to pass through it. When a voltage is applied across the diode, it creates an electric field within the diode which causes electrons to move from the more positive to the more negative region. This creates a potential difference across the diode which restricts the flow of current. The adjustment of the voltage potential acts as a limiting control of the current flowing through the diode.

In forward bias, the voltage applied to the diode\'s cathode is greater than the voltage at the diode\'s anode. Under these conditions, the electric field generated by the voltage applied to the diode creates an electron flow, allowing for the current to flow through the diode. The current cannot pass through the diode if insufficient voltage is applied. When in reverse bias, the voltage at the anode is greater than the cathode, thus creating an opposite electric field, pushing electrons back into the more positive anode region and preventing the flow of current.

In the case of the 1N980B diode, it is designed to limit the voltage applied to either the anode or cathode to a maximum of 6V. This is known as the breakdown voltage, where the electric field is strong enough to cause a break in the electric potential barrier created by the diode and current is allowed to flow through the device. This feature is useful in many applications, making the 1N980B an ideal choice for a low-cost voltage reference or protection element.

The specific data is subject to PDF, and the above content is for reference

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