
1PGSMB5933HR5G Discrete Semiconductor Products |
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Allicdata Part #: | 1PGSMB5933HR5GTR-ND |
Manufacturer Part#: |
1PGSMB5933HR5G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 22V 3W DO214AA |
More Detail: | Zener Diode 22V 3W ±5% Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1700 |
850 +: | $ 0.13184 |
1700 +: | $ 0.11797 |
2550 +: | $ 0.10756 |
5950 +: | $ 0.10062 |
21250 +: | $ 0.09368 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 17.5 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 16.7V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Description
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1PGSMB5933HR5G Application Field and Working Principle
Introduction
1PGSMB5933HR5G is a state-of-the-art Zener Diode developed by the company Infineon. It is a medium voltage (5.6 V to 33 V) Zener Diode with exceptionally low junction capacitance. The device is built in P-channel enhancement mode, featuring an integrated EMI filter, which makes it suitable for global applications. Additionally, the device offers exceptional ESD protection and high surge current capability. The design is optimized to ensure stable performance and optimized levels of reliability and long life. With its excellent electrical characteristics and robust construction, it is the perfect solution for a wide variety of global industrial applications.Application Field
1PGSMB5933HR5G is very suitable for applications that require high surge currents, such as automotive, industrial, and aerospace applications. The device is also suitable for use in power supplies and voltage converters, due to its low junction capacitance and its ability to operate at a wide operating temperature range. Because of its robustness and excellent electrical characteristics, it is also suitable for applications that require low EMI levels, such as medical and telecommunications applications.Working Principle
The 1PGSMB5933HR5G is a P-channel enhancement mode Zener Diode. It consists of three main sub-components: a Schottky Barrier Diode (SBD), a resistive load, and a Zener Diode. The SBD works together with the Zener Diode, creating a series-regulating circuit. The SBD acts as a clamp to control the series current, while the resistive load and the Zener Diode dissipate the excess current when it exceeds the predetermined current limit.In the on-state, the SBD and the Zener Diode work together to ensure the predetermined series current limit. If the current rises above the predetermined limit, the SBD clamp will activate, causing the voltage across the device to drop. The resistive load then dissipates the excess current, ensuring a stable operating state.The 1PGSMB5933HR5G can be used in a variety of applications, depending on its voltage rating. It can be used for lower voltage applications, such as in mobile phones and other portable electronics, or for higher voltage applications, such as in industrial and automotive applications.Conclusion
1PGSMB5933HR5G is a high-performance Zener Diode from Infineon. It has an integrated EMI filter, a wide operating temperature range, and exceptional electrical characteristics. It offers excellent surge protection and long life reliability. The device is suitable for a wide range of industrial and automotive applications, as well as applications requiring low EMI levels. Its advanced design makes it the perfect solution for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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