1PS79SB31,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1550-2-ND |
Manufacturer Part#: |
1PS79SB31,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE SCHOTTKY 30V 200MA SOD523 |
More Detail: | Diode Schottky 30V 200mA (DC) Surface Mount SOD-52... |
DataSheet: | 1PS79SB31,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04326 |
6000 +: | $ 0.03893 |
15000 +: | $ 0.03461 |
30000 +: | $ 0.03245 |
75000 +: | $ 0.02884 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 500mV @ 200mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 30µA @ 10V |
Capacitance @ Vr, F: | 25pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Operating Temperature - Junction: | 125°C (Max) |
Base Part Number: | 1PS79SB31 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1PS79SB31,115 diode falls into the category of single rectifiers, and is designed for a variety of applications. This diode is a high performance, Schottky barrier diode with an ultra-low forward voltage drop, making it an ideal choice for numerous power supply and DC-DC conversion applications.In addition to its suitable characteristics for power electronics and DC-DC converters, the 1PS79SB31,115 is also well-suited for use in voltage clamping and low-loss or low-drop rectification. It is designed with a low forward voltage which improves the efficiency and reduces the power dissipation. Furthermore, its low forward voltage reduces the impact of static charge, making it better suited for high voltage applications. The 1PS79SB31,115 diode utilizes the Schottky barrier principle to reduce the device\'s power consumption and improve its overall switching speed. This principle works by creating an electrical barrier at the junction between the metal-semiconductor interface. The presence of this barrier requires a lower forward voltage than that of a conventional junction diode. This lower forward voltage improves the efficiency and leads to faster switching times that can be used to achieve both lower power consumption and faster data rates.The 1PS79SB31,115 diode is designed for operation over a wide temperature range of -55°C to +150°C. It also offers high surge capability and a low inherent capacitance. This makes it suitable for use in a variety of sensitive, high-performance equipment and applications.The 1PS79SB31,115 diode is a rugged, reliable device. It is created using a planar chip manufacturing process that is designed for excellent thermal resistance and encapsulated for use in harsh environments. This diode also has built-in diode protection, which can reduce damage in the event of an electrical fault, and provides superior ESD (electrostatic discharge) protection.Overall, the 1PS79SB31,115 diode is an efficient and reliable diode with a low and stable power consumption that is suitable for a variety of applications. It can be used in power electronics, voltage clamping, DC-DC converters, and as a low-loss or low-drop rectifier. With its excellent ESD protection, thermal resistance, and wide temperature range, the 1PS79SB31,115 makes an ideal choice for high performance designs.
The specific data is subject to PDF, and the above content is for reference
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