1SMA4755 R3G

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The 1SMA4755 R3G is a small signal zener diode. It is a single discrete element device, with a low power capability. Its main application field is in providing protection against transient overvoltage, reverse EMF, or EMC environments. It is an ideal choice for use in portable equipment where space is a constraint, and it is a suitable alternative to the more commonly used Schottky diode.

The 1SMA4755 R3G has an operating temperature range from -65°C to +175°C. It also has a low clamping voltage, typically 0.43V, making it suitable for use in portable devices. It has a maximum power dissipation of 200mW, meaning it will not be overwhelmed when exposed to higher currents.

The working principle of the 1SMA4755 R3G is based on the principle of reverse-biased breakdown. When the reverse voltage on the diode exceeds the diode’s specified breakdown voltage, the diode will begin to conduct current in the reverse direction. This allows the diode to absorb the energy in the form of a surge, or transient overvoltage.

The 1SMA4755 R3G also has a low leakage current, which is important for controlling voltage levels in a circuit. It also has a low forward voltage drop, which helps to minimize power losses in the circuit.

The 1SMA4755 R3G is a robust device, designed for use in a wide variety of applications. It is a reliable choice for protection against overvoltage, reverse EMF, and EMC environments. Its low power dissipation makes it suitable for use in low power applications, while its low leakage current helps to control voltage levels in the circuit.

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