1SMA5920BT3G Allicdata Electronics
Allicdata Part #:

1SMA5920BT3GOSTR-ND

Manufacturer Part#:

1SMA5920BT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 6.2V 1.5W SMA
More Detail: Zener Diode 6.2V 1.5W ±5% Surface Mount SMA
DataSheet: 1SMA5920BT3G datasheet1SMA5920BT3G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 2.5µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Base Part Number: SMA5920
Description

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Diodes - Zener - Single

1SMA5920BT3G is a single zener diode designed for use in various applications. The diode has a reverse current blocking capability of up to 3A and a reverse breakdown voltage of −5V. It is based on planar technology, and the package is provided in a SOT-323 form factor.

Application Fields

Due to its low voltage, the 1SMA5920BT3G diode is primarily used for protection against transient overvoltage conditions. It is also used as a voltage regulation device for voltage stabilization and overvoltage clamps. It finds its use in automotive, consumer and computer applications where switching regulators and power supply circuits require protection from overvoltage transients.

Working Principle

A Zener diode works on the principle of “Zener Breakdown”. In this phenomenon, the voltage rating of the diode is reached and a reverse breakdown current begins to flow due to the high electric field of the PN junction. This reverse breakdown voltage blocks the voltage above the rated value. The diode works in the reverse bias condition due to this reverse breakdown current and the power consumption is comparatively low at this operating state.

The reverse current of 1SMA5920BT3G is regulated by controlling the reverse voltage across the PN junction. The reverse breakdown voltage applies a constant voltage drop across the diode when the load current increases beyond its rated current. This regulates the current and protects the devices from overvoltage transients.

The specific data is subject to PDF, and the above content is for reference

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