1SMA5927BT3G Discrete Semiconductor Products

The 1SMA5927BT3G is a single zener diode from ON Semiconductor. This zener diode is available in a SMA (DO-214AB) package that measures 2.0 mm by 0.95 mm, making it suitable for use in a wide range of applications. It has a low forward voltage of less than 1 volt, making it well suited for current limiting in circuit designs. The zener diode has a breakdown voltage between 5.9 and 6.1 volts, and a maximum power dissipation of 500 milliwatts.

The 1SMA5927BT3G is designed to provide a stable clamping voltage in circuit designs and is commonly used in overvoltage protection, transient voltage suppression, and power supply regulation. It can be used to clamp transients to a safe voltage level, thus protecting the circuit from damage that could occur due to overvoltage. Furthermore, it can be used to regulate the output voltage of a power supply when the input voltage varies. The zener diode can be used to provide stable voltage levels, thus ensuring that the circuit functions correctly.

The working principle of 1SMA5927BT3G is based on the zener effect. When a voltage is applied to a PN junction, the electric field across the junction will increase with increasing voltage. When this electric field exceeds a certain value, electrons are able to tunnel through the junction, creating an avalanche breakdown. The breakdown voltage is determined by the doping levels of the junction and can be easily set in manufacturing. The tunneling of electrons in the PN junction creates a voltage that is approximately equal to the breakdown voltage and this voltage is held nearly constant even if the applied voltage varies.

In summary, the 1SMA5927BT3G is a single zener diode from ON Semiconductor that is suitable for use in a variety of applications, including overvoltage protection and power supply regulation. Its low forward voltage and stable clamping voltage make it a popular choice for circuit designs. The working principle of 1SMA5927BT3G is based on the zener effect, whereby the tunneling of electrons in a PN junction creates a voltage equal to the breakdown voltage of the diode.